Germanium-Vacancy Single Color Centers in Diamond von Iwasaki, Takayuki, Ishibashi, Fumitaka, Miyamoto, Yoshiyuki, Doi, Yuki, Kobayashi, Satoshi, Miyazaki, Takehide, Tahara, Kosuke, Jahnke, Kay D., Rogers, Lachlan J., Naydenov, Boris, Jelezko, Fedor, Yamasaki, Satoshi, Nagamachi, Shinji, Inubushi, Toshiro, Mizuochi, Norikazu, Hatano, Mutsuko

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Determination of observable depth of dislocations in 4H-SiC by X-ray topography in back reflection von Ishiji, Kotaro, Kawado, Seiji, Hirai, Yasuharu, Nagamachi, Shinji

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Straightforward synthesis of silicon vacancy (SiV) center-containing single-digit nanometer nanodiamonds via detonation process von Makino, Yuto, Mahiko, Tomoaki, Liu, Ming, Tsurui, Akihiko, Yoshikawa, Taro, Nagamachi, Shinji, Tanaka, Shigeru, Hokamoto, Kazuyuki, Ashida, Masaaki, Fujiwara, Masanori, Mizuochi, Norikazu, Nishikawa, Masahiro

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Application of x-ray phase plate to grazing incidence x-ray topography for the control of penetration depth von Hirano, Keiichi, Takahashi, Yumiko, Nagamachi, Shinji

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Warpage Structure of 4H-SiC after Implantation and Annealing Processes von Hirai, Yasuharu, Nagamachi, Shinji, Kawado, Seiji, Ishiji, Kotaro

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Ferromagnetic-Paramagnetic Patterning of FePtRh Films by Fe Ion Implantation von Hasegawa, Takashi, Kondo, Yuji, Yamane, Haruki, Nagamachi, Shinji, Ishio, Shunji

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Resistivity Measurement of P+-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry von Ishiji, Kotaro, Kawado, Seiji, Nagamachi, Shinji, Hirai, Yasuharu

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Characterization of magnesium channeled implantation layers in GaN(0001) von Suyama, Atsushi, Kawanowa, Hitoshi, Minagawa, Hideaki, Maekawa, Junko, Nagamachi, Shinji, Aoki, Masahiko, Ohta, Akio, Makihara, Katsunori, Miyazaki, Seiichi

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Electrical Properties of Mg-Implanted 4H-SiC von Morine, Tatsuya, Matsuura, Hideharu, Nagamachi, Shinji

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Influence of P super(+)-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers von Ishiji, Kotaro, Kawado, Seiji, Hirai, Yasuharu, Nagamachi, Shinji

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Influence of P+-Implantation and Post-Annealing on Warpage Structure of 4H-SiC Wafers von Kawado, Seiji, Hirai, Yasuharu, Nagamachi, Shinji, Ishiji, Kotaro

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Structural change of micropipes in Al-implanted SiC crystals by post-implantation annealing von Ishiji, Kotaro, Ohtani, Ryota, Kawado, Seiji, Hirai, Yasuharu, Nagamachi, Shinji

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Density and energy level of a deep-level Mg acceptor in 4H-SiC von Matsuura, Hideharu, Morine, Tatsuya, Nagamachi, Shinji

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Focused ion‐beam direct deposition of metal thin film von Nagamachi, Shinji, Yamakage, Yasuhiro, Ueda, Masahiro, Maruno, Hiromasa, Ishikawa, Junzo

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Observation of strain field in Al ion-implanted silicon carbide crystals by reciprocal space mapping and angle-resolved X-ray topography von Takahashi, Yumiko, Hirano, Keiichi, Shimura, Takayoshi, Nagamachi, Shinji

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Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography considering X-ray penetration-depth dependence von Takahashi, Yumiko, Hirano, Keiichi, Shimura, Takayoshi, Nagamachi, Shinji

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Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography and local rocking curve imaging- X-ray penetration-depth dependence von Takahashi, Yumiko, Hirano, Keiichi, Shimura, Takayoshi, Nagamachi, Shinji

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Focused ion beam direct deposition of gold von NAGAMACHI, S, YAMAKAGE, Y, MARUNO, H, UEDA, M, SUGIMOTO, S, ASARI, M

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Position-Controlled Si Nanocrystals in a SiO 2 Thin Film Using a Novel Amorphous Si Ultra-Thin-Film “Nanomask” due to a Bio-Nanoprocess for Low-Energy Ion Implantation von Nakama, Yuji, Nagamachi, Shinji, Ohta, Jun, Nunoshita, Masahiro

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Focused ion beam direct deposition of superconductive thin film von Nagamachi, Shinji, Yamakage, Yasuhiro, Ueda, Masahiro, Maruno, Hiromasa, Shinada, Kei, Fujiyama, Yoichi, Asari, Masatoshi, Ishikawa, Junzo

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