Characterization of defects in β-Ga2O3 single crystals von Nakai, Katsuhiko, Nagai, Tetsuya, Noami, Kengo, Futagi, Toshiro

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Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates von Miura, Aya, Nagai, Tetsuya, Senda, Ryota, Kawashima, Takeshi, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

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Control of stress and crystalline quality in GaInN films used for green emitters von Iwaya, Motoaki, Miura, Aya, Senda, Ryota, Nagai, Tetsuya, Kawashima, Takeshi, Iida, Daisuke, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

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Realization of High-Crystalline-Quality Thick m-Plane GaInN Film on 6H-SiC Substrate by Epitaxial Lateral Overgrowth von Senda, Ryota, Miura, Aya, Hayakawa, Takemasa, Kawashima, Takeshi, Iida, Daisuke, Nagai, Tetsuya, Iwaya, Motoaki, Kamiyama, Satoshi, Amano, Hiroshi, Akasaki, Isamu

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Real time measurement of stress by electroencephalogram during contentious mouth opening von Otsuka, Ryoko, Nomura, Yoshiaki, Okada, Ayako, Uraguchi, Masahide, Tadokoro, Hisanori, Nagai, Tetsuya, Fujii, Yoshihito, Miura, Masahiro, Kawachi, Ryo, Yamamoto, Masashi, Wakana, Taketoshi, Hanada, Nobuhiro

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Characterization of defects in β-Ga 2 O 3 single crystals von Nakai, Katsuhiko, Nagai, Tetsuya, Noami, Kengo, Futagi, Toshiro

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Characterization of defects in square -Ga sub(2) O sub(3) single crystals von Nakai, Katsuhiko, Nagai, Tetsuya, Noami, Kengo, Futagi, Toshiro

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Refractive index measuring device and refractive index measuring method von Nagai, Tetsuya

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V-block refractometer von Nagai, Tetsuya

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Attachment for liquid sample measurement, refractive index measuring device and refractive index measuring method von Nagai, Tetsuya

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REFRACTIVE INDEX MEASURING DEVICE AND REFRACTIVE INDEX MEASURING METHOD von NAGAI, Tetsuya

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ATTACHMENT FOR LIQUID SAMPLE MEASUREMENT, REFRACTIVE INDEX MEASURING DEVICE AND REFRACTIVE INDEX MEASURING METHOD von NAGAI, Tetsuya

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V-BLOCK REFRACTOMETER von NAGAI, Tetsuya

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Evaluation of Threading Mixed Dislocations in SiC by X-ray Topography von Nakai, Katsuhiko, Nagai, Tetsuya, Moriwake, Syuichi, Noami, Kengo, Futagi, Toshiro

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Evaluation of Defects in β-Ga2O3 by X-ray Topography and Transmission Electron Microscopy von Nakai, Katsuhiko, Nagai, Tetsuya, Noami, Kengo, Futagi, Toshiro

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Spectrometer von HIRAOKA, Ryoji, YONEZAWA, Zeno, NAGAI, Tetsuya

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Evaluation of Crystal Defect in β-Ga2O3 Crystal (2) von Nagai, Tetsuya, Noami, Kengo, Nakai, Katsuhiko, Futagi, Toshiro

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VEHICLE SEAT von ODA, Osamu, KATOH, Kohshi, SUGIMOTO, Takashi, NAGAI, Tetsuya, HADA, Masatoshi

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A 1.25-Gb/s CMOS burst-mode optical transceiver for ethernet PON system von Nishimura, K., Kimura, H., Watanabe, M., Nagai, T., Nojima, K., Gomyo, K., Takata, M., Iwamoto, M., Asano, H.

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Evaluation of SiC crystal with laser annealing (4) von uchimori, mizuki, Mazzamuto, Fulvio, Nagai, Tetsuya, Nakai, Katsuhiko, Ono, Shuichi, Arai, Manabu, Yamamoto, Hidekazu

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