Effect of Surrounded-Channel Structure on Electrical Characteristics of c -Axis Aligned Crystalline In-Ga-Zn-O Field-Effect Transistor von Kobayashi, Yoshiyuki, Matsubayashi, Daisuke, Hondo, Suguru, Yamamoto, Tsutomu, Okazaki, Yutaka, Nagai, Masaharu, Sasagawa, Shinya, Ito, Daigo, Hata, Yuki, Hamada, Takashi, Arasawa, Ryo, Sakakura, Masayuki, Suzawa, Hideomi, Yamamoto, Yoshitaka, Yamazaki, Shunpei

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Electrical characteristics and short-channel effect of c-axis aligned crystal indium gallium zinc oxide transistor with short channel length von Kobayashi, Yoshiyuki, Matsuda, Shinpei, Matsubayashi, Daisuke, Suzawa, Hideomi, Sakakura, Masayuki, Hanaoka, Kazuya, Okazaki, Yutaka, Yamamoto, Tsutomu, Hondo, Suguru, Hamada, Takashi, Sasagawa, Shinya, Nagai, Masaharu, Hata, Yuki, Maruyama, Tetsunori, Yamamoto, Yoshitaka, Yamazaki, Shunpei

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Optical characteristics of ZnCdSe/ZnSSe single quantum wells von Tsukamoto, Hironori, Tamamura, Kohshi, Nagai, Futoshi Hiei, Masaharu, Ikeda, Masao

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Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using c-axis aligned crystalline oxide semiconduct... von Onuki, Tatsuya, Kato, Kiyoshi, Nomura, Masumi, Yakubo, Yuto, Nagatsuka, Shuhei, Matsuzaki, Takanori, Hondo, Suguru, Hata, Yuki, Okazaki, Yutaka, Nagai, Masaharu, Atsumi, Tomoaki, Sakakura, Masayuki, Okuda, Takashi, Yamamoto, Yoshitaka, Yamazaki, Shunpei

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ZnCdSe/ZnSSe/ZnMgSSe SCH laser diode with a GaAs buffer layer von ITOH, S, NAKAYAMA, N, ISHIBASHI, A, MORI, Y, MATSUMOTO, S, NAGAI, M, NAKANO, K, OZAWA, M, OKUYAMA, H, TOMIYA, S, OHATA, T, IKEDA, M

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27.2: High Definition 458 ppi OLED with Logic Circuit using Low Temperature Single-Crystal-Silicon (LTSS) TFT Backplane Driven by 2.5 V Single Power Supply von Ohnuma, Hideto, Hamada, Takashi, Shimomura, Akihisa, Nagai, Masaharu, Sekiguchi, Keiichi, Kozuma, Munehiro, Ikeda, Takayuki, Yamazaki, Shunpei, Mitani, Masahiro, Suga, Katsuyuki, Yamamoto, Yoshitaka

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Towards Enhanced Protection of the Marine Environment and Vulnerable Populations in Relation to Armed Conflicts von Graham, Kimberley J., Hessami, Elizabeth B., Nagai, Masa (Masaharu)

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Electrophoretic Deposition of Ferroelectric Barium Titanate Thick Films and Their Dielectric Properties von Nagai, Masaharu, Yamashita, Kimihiro, Umegaki, Takao, Takuma, Yasuhisa

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Display device and method for manufacturing the same von Nagai, Masaharu, Tsuchiya, Kaoru, Matsuda, Yutaka, Sakakura, Masayuki, Anzai, Aya

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DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME von TSUCHIYA, Kaoru, ANZAI, Aya, NAGAI, Masaharu, SAKAKURA, Masayuki, MATSUDA, Yutaka

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Electrophoretic coating of multilayered apatite composite on alumina ceramics von Yamashita, Kimihiro, Yonehara, Eiko, Ding, Xufeng, Nagai, Masaharu, Umegaki, Takao, Matsuda, Motohide

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Light emitting device von Nagai, Masaharu, Tsuchiya, Kaoru, Matsuda, Yutaka, Sakakura, Masayuki, Anzai, Aya

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Display device and method for manufacturing the same von Nagai, Masaharu, Tsuchiya, Kaoru, Matsuda, Yutaka, Sakakura, Masayuki, Anzai, Aya

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Semiconductor device, method for manufacturing semiconductor device, and electronic appliance von MIZOGUCHI TAKAFUMI, NAGAI MASAHARU

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Display Device and Method for Manufacturing the Same von Nagai, Masaharu, Tsuchiya, Kaoru, Matsuda, Yutaka, Sakakura, Masayuki, Anzai, Aya

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Display device and method for manufacturing the same von Anzai Aya, Nagai Masaharu, Sakakura Masayuki, Matsuda Yutaka, Tsuchiya Kaoru

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SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPLIANCE von MIZOGUCHI TAKAFUMI, NAGAI MASAHARU

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Semiconductor device, method for manufacturing semiconductor device, and electronic appliance von Nagai, Masaharu, Mizoguchi, Takafumi

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Semiconductor device, method for manufacturing semiconductor device, and electronic appliance von MIZOGUCHI TAKAFUMI, NAGAI MASAHARU

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LIGHT EXPOSURE MASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME von NAGAI MASAHARU, OHNUMA HIDETO

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