Highly stable semi-transparent MAPbI3 perovskite solar cells with operational output for 4000 h von Islam, M. Bodiul, Yanagida, M., Shirai, Y., Nabetani, Y., Miyano, K.

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Trapping of excess energy in a nano-layered microenvironment to promote chemical reactions von Ramakrishnan, V, Nabetani, Y, Yamamoto, D, Shimada, T, Tachibana, H, Inoue, H

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Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides von We na, M, Kudrawiec, R, Nabetani, Y, Tanaka, T, Jaquez, M, Dubon, O D, Yu, K M, Walukiewicz, W

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Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOx alloys von We na, M, Baranowski, M, Kudrawiec, R, Nabetani, Y, Walukiewicz, W

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Effects of band anticrossing on the temperature dependence of the band gap of ZnSe 1−x O x alloys von Wełna, M, Baranowski, M, Kudrawiec, R, Nabetani, Y, Walukiewicz, W

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Temperature dependence of the band gap of ZnSe1−xOx von Broesler, R., Haller, E. E., Walukiewicz, W., Muranaka, T., Matsumoto, T., Nabetani, Y.

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Epitaxial growth and optical investigations of ZnTeO alloys von Nabetani, Y., Okuno, T., Aoki, K., Kato, T., Matsumoto, T., Hirai, T.

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Effect of oxygen on the electronic band structure in ZnOxSe1−x alloys von Shan, W., Walukiewicz, W., Ager, J. W., Yu, K. M., Wu, J., Haller, E. E., Nabetani, Y., Mukawa, T., Ito, Y., Matsumoto, T.

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Epitaxial growth and large band-gap bowing of ZnSeO alloy von Nabetani, Y., Mukawa, T., Ito, Y., Kato, T., Matsumoto, T.

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Initial growth stage and optical properties of a three-dimensional InAs structure on GaAs von Nabetani, Y., Ishikawa, T., Noda, S., Sasaki, A.

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Theory of strain states in InAs quantum dots and dependence on their capping layers von Nabetani, Y., Matsumoto, T., Sasikala, G., Suemune, I.

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Dependence of In2Se3 crystal structures grown on GaAs (001) substrates on growth temperature and VI/III ratio von KATO, T, UTSUGI, Y, OHARA, T, MURANAKA, T, NABETANI, Y, MATSUMOTO, T

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Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O von Felici, Marco, Polimeni, Antonio, Capizzi, Mario, Nabetani, Y., Okuno, T., Aoki, K., Kato, T., Matsumoto, T., Hirai, T.

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Temperature dependence and bowing of the bandgap in ZnSe1−xOx von Polimeni, A., Capizzi, M., Nabetani, Y., Ito, Y., Okuno, T., Kato, T., Matsumoto, T., Hirai, T.

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Low temperature growth of transparent conducting ZnO films by plasma assisted deposition von Nishii, A., Uehara, T., Sakano, T., Nabetani, Y., Akitsu, T., Kato, T., Matsumoto, T., Hagihara, S., Abe, O., Hiraki, S., Fujikawa, Y.

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Adjustment for antibiotic exposure level in catheter-associated urinary tract infections von Utsumi, M, Yamada, M, Nishi, I, Nabetani, Y, Asari, S, Tomono, K, Makimoto, K

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X-ray absorption and diffraction study of II–VI dilute oxide semiconductor alloy epilayers von Boscherini, F, Malvestuto, M, Ciatto, G, D’Acapito, F, Bisognin, G, De Salvador, D, Berti, M, Felici, M, Polimeni, A, Nabetani, Y

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Theoretical analysis of microscopic strain distribution and phase stability of Zn chalcogenide alloys using valence force field model von Ito, Y., Nabetani, Y., Kato, T., Matsumoto, T.

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Incorporation of P in CuInS2 using InP as a p-type dopant von Kato, T., Yamaguchi, H., Nakamura, T., Nabetani, Y., Matsumoto, T.

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MBE growth and RHEED characterization of MnSe/ZnSe superlattices on GaAs (1 0 0) substrates von Ishibe, I, Nabetani, Y, Kato, T, Matsumoto, T

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