Effect of postgrowth techniques on the characteristics of triple-junction inGaP/GaAs/Ge solar cells von Andreev, V.M, Grebenshchikova, E.A, Dmitriev, P.A, Ilinskaya, N.D, Kalinovsky, V.S, Kontrosh, E.V, Malevskaya, A.V, Usikova, A.A

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Resistance of 4H-SiC Schottky barriers at high forward-current densities von Ivanov, P. A., Samsonova, T. P., Il’inskaya, N. D., Serebrennikova, O. Yu, Kon’kov, O. I., Potapov, A. S.

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High-power LEDs based on InGaAsP/InP heterostructures von Rakovics, V., Imenkov, A. N., Sherstnev, V. V., Serebrennikova, O. Yu, Il’inskaya, N. D., Yakovlev, Yu. P.

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Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes von Ivanov, P. A., Il’inskaya, N. D., Potapov, A. S., Samsonova, T. P., Afanas’ev, A. V., Il’in, V. A.

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High-Speed Bridge Photodetectors for the Mid-IR Spectral Region von Pivovarova, A. A., Kunitsyna, E. V., Konovalov, G. G., Slipchenko, S. O., Podoskin, A. A., Andreev, I. A., Pikhtin, N. A., Il’inskaya, N. D., Chernyakov, A. E., Yakovlev, Yu. P.

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Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm) von Imenkov, A. N., Sherstnev, V. V., Kovalev, I. V., Il’inskaya, N. D., Serebrennikova, O. Yu, Teissier, R., Baranov, A. N., Yakovlev, Yu. P.

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P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction von Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.

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Influence of the Ohmic Contact Structure on the Performance of GaAs/AlGaAs Photovoltaic Converters von Malevskaya, A. V., Kalinovskii, V. S., Il’inskaya, N. D., Malevskii, D. A., Kontrosh, E. V., Shvarts, M. Z., Andreev, V. M.

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Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures von Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.

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InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths von Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

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P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–... von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW von Mikhailova, M. P., Andreev, I. A., Konovalov, G. G., Danilov, L. V., Ivanov, E. V., Kunitsyna, E. V., Il’inskaya, N. D., Levin, R. V., Pushnyi, B. V., Yakovlev, Yu. P.

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InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure von Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A

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Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes von Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.

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Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials von Ushanov, V. I., Chaldyshev, V. V., Bert, N. A., Nevedomsky, V. N., Il’inskaya, N. D., Lebedeva, N. M., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Fröhlich resonance in the AsSb/AlGaAs system von Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect von Gadzhiyev, I. M., Buyalo, M. S., Gubenko, A. E., Egorov, A. Yu, Usikova, A. A., Il’inskaya, N. D., Lyutetskiy, A. V., Zadiranov, Yu. M., Portnoi, E. L.

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