RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT von Lenka, T. R., Dash, G. N., Panda, A. K.

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A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes von Swain, S K, Pradhan, J, Dash, G N, Pattanaik, S R

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Prospects of 6H-SiC for operation as an IMPATT diode at 140 GHz von Pattanaik, S R, Dash, G N, Mishra, J K

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Characteristics of a GaN-based Gunn diode for THz signal generation von Parida, R K, Agrawala, N C, Dash, G N, Panda, A K

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Graphene for Electron Devices: The Panorama of a Decade von Dash, G. N., Pattanaik, Satya R., Behera, Sriyanka

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Simulation studies on the noise behaviour of double avalanche region diodes von Mishra, J K, Dash, G N, Mishra, I P

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Potentials of GaP as millimeter wave IMPATT diode with reference to Si,GaAs and GaN von Janmejaya Pradhan, S K Swain, S R Pattnaik, G N Dash

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Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature von Pradhan, J., Pattanaik, S. R., Swain, S. K., Dash, G. N.

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Cap-layer and charge sheet effect in InP based pnp δ-doped heterojunction bipolar transistor von Jena, M. R., Panda, A. K., Dash, G. N.

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An extremely low noise heterojunction IMPATT von Mishra, J.K., Panda, A.K., Dash, G.N.

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Characterization of electrical properties of AlGaN/GaN interface using coupled Schrodinger and Poisson equation von Das, S., K. Panda, A., N. Dash, G.

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Microwave Characteristics of SiC IMPATT Diodes at 220 GHz von Pattanaik, S R, Pradhan, J, Swain, S K, Dash, G N

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Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode von Karan, Deepak K., Panda, Pranati, Dash, G. N.

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Computer-aided studies on the wide-band microwave characteristics of a silicon double avalanche region (DAR) diode von Panda, A K, Dash, G N, Pati, S P

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Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region von Mishra, J K, Panda, A K, Dash, G N

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A generalized simulation method for MITATT-mode operation and studies on the influence of tunnel current on IMPATT properties von Dash, G N, Pati, S P

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Computer-aided studies on the microwave characteristics of InP/GaInAs and GaAs/GaInAs heterostructure single-drift-region impact avalanche transit time diodes von Dash, G N, Pati, S P

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Comment on "Monte Carlo investigation of current voltage and avalanche noise in GaN double-drift impact diodes" [ J. Appl. Phys. 97 , 043709 ( 2005 ) ] von Dash, G. N.

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Structural and Mechanical Strength of Proton Radiation Processed Polyethylene Terephthalate von Sahoo, M., Mallick, B., Rout, S., Dash, G. N.

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A new design approach for MITATT and TUNNETT mode devices von Dash, G.N.

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