In–situ strain control in epitaxial silicon carbide compound semiconductor von Jazizadeh, Behzad, Myronov, Maksym

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The germanium quantum information route von Scappucci, Giordano, Kloeffel, Christoph, Zwanenburg, Floris A., Loss, Daniel, Myronov, Maksym, Zhang, Jian-Jun, De Franceschi, Silvano, Katsaros, Georgios, Veldhorst, Menno

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Revealing Low Thermal Conductivity of Germanium Tin Semiconductor at Room Temperature von Ayinde, Sabur, Myronov, Maksym

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Uprooting defects to enable high-performance III–V optoelectronic devices on silicon von Bioud, Youcef A., Boucherif, Abderraouf, Myronov, Maksym, Soltani, Ali, Patriarche, Gilles, Braidy, Nadi, Jellite, Mourad, Drouin, Dominique, Arès, Richard

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Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction von Kaganer, Vladimir, Ulyanenkova, Tatjana, Benediktovitch, Andrei, Myronov, Maksym, Ulyanenkov, Alex

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Strain mapping of silicon carbon suspended membranes von Colston, Gerard, Newell, Oliver, Rhead, Stephen D., Shah, Vishal A., Myronov, Maksym

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Holes Outperform Electrons in Group IV Semiconductor Materials von Myronov, Maksym, Kycia, Jan, Waldron, Philip, Jiang, Weihong, Barrios, Pedro, Bogan, Alex, Coleridge, Peter, Studenikin, Sergei

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Electric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressively strained germanium semiconductor on silicon von Myronov, Maksym, Waldron, Philip, Barrios, Pedro, Bogan, Alex, Studenikin, Sergei

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Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature von Myronov, Maksym, Jahandar, Pedram, Rossi, Simone, Sewell, Kevin, Murphy‐Armando, Felipe, Pezzoli, Fabio

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Electrical activation of nitrogen heavily implanted 3C-SiC(100) von Li, Fan, Sharma, Yogesh, Shah, Vishal, Jennings, Mike, Pérez-Tomás, Amador, Myronov, Maksym, Fisher, Craig, Leadley, David, Mawby, Phil

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An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition von Myronov, Maksym, Morrison, Christopher, Halpin, John, Rhead, Stephen, Casteleiro, Catarina, Foronda, Jamie, Shah, Vishal Ajit, Leadley, David

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Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy von Jahandar, Pedram, Myronov, Maksym

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Characterization of SiGe thin films using a laboratory X-ray instrument von Ulyanenkova, Tatjana, Myronov, Maksym, Benediktovitch, Andrei, Mikhalychev, Alexander, Halpin, John, Ulyanenkov, Alex

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Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus von Colston, Gerard, Myronov, Maksym

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Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates von Burrows, Christopher W, Dobbie, Andrew, Myronov, Maksym, Hase, Thomas P. A, Wilkins, Stuart B, Walker, Marc, Mudd, James J, Maskery, Ian, Lees, Martin R, McConville, Christopher F, Leadley, David R, Bell, Gavin R

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Strained germanium for applications in spintronics von Morrison, Christopher, Myronov, Maksym

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(Invited) Epitaxy of Silicon Carbide for Power Devices von Myronov, Maksym

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Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures von Colston, Gerard, Myronov, Maksym

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Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process von Dobbie, Andy, Nguyen, Van Huy, Myronov, Maksym, Whall, Terry E, Parker, Evan H. C, Leadley, David R

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A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer von Myronov, Maksym, Colston, Gerard, Davies, Jack, Michael, Laura

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