Characterization of MOSFETs fabricated on large-grain polysilicon on insulator von Jagar, Singh, Chan, Mansun, Wang, Hongmei, Poon, Vincent M.C., Myasnikov, A.M.

Volltext

SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer von Poon, M.C, Gao, Y, Kok, T.C.W, Myasnikov, A.M, Wong, H

Volltext

Dislocation model of nucleation and development of slip bands and their effect on service life of structural materials subject to cyclic loading von Shetulov, D. I., Andreev, V. V., Myasnikov, A. M.

Volltext

A secondary ion mass spectrometry study of p+ porous silicon von Karanovich, A A, Romanov, S I, Kirienko, V V, Myasnikov, A M, Obodnikov, V I

Volltext

Distribution of impurities implanted in InSb and InAs before and after annealing von Gerasimenko, N.N., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I., Verner, I.V.

Volltext

SIMS study on redistribution of implanted impurities in InSb and InAs during post-implantation annealing von Gerasimenko, N.N., Khryashchev, G.S., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I.

Volltext

Kinetics of the redistribution of an impurity in quasiperiodic structures appearing in heavily boron-doped silicon irradiated by boron ions von Myasnikov, A. M.

Volltext

Formation of a quasi-periodic boron distribution in silicon, initiated by ion implantation von Myasnikov, A. M., Obodnikov, V. I., Seryapin, V. G., Tishkovskii, E. G., Fomin, B. I., Cherepov, E. I.

Volltext

The electrical properties of planar n +−p junctions in InAs produced by S + ion implantation von Gerasimenko, N.N., Kuryshev, G.L., Myasnikov, A.M., Obodnikov, V.I., Safronov, L.N., Khryashchev, G.S.

Volltext

Conversion of conduction in p-InAs by Ar + ion implantation von Gerasimenko, N.N., Myasnikov, A.M., Nesterov, A.A., Obodnikov, V.I., N Safronov, L, Khriaschev, G.S.

Volltext

Combinatorial and Geometric Group Theory: Dortmund and Ottawa-Montreal conferences von Bogopolski, Oleg, Bumagin, Inna, Kharlampovich, Olga, Ventura, Enric

Volltext

Redistribution of magnesium in InAs during post-implantation annealing von Gerasimenko, N.N., Myasnikov, A.M., Obodnikov, V.I., Safronov, L.N.

Volltext

A secondary ion mass spectrometry study of p+ porous silicon von KARANOVICH, A. A, ROMANOV, S. I, KIRIENKO, V. V, MYASNIKOV, A. M, OBODNIKOV, V. I

Volltext

Lifetime of end seal springs von Myasnikov, A. M., Kostrov, N. A.

Volltext

Investigation of the scale factor for strength calculation of chemical production machinery and apparatus von Shetulov, D. I., Myasnikov, A. M.

Volltext

X-Ray Emission from Colliding Stellar Winds von Zhekov, S. A., Palla, F., Myasnikov, A. M.

Volltext

Direct electrical characterization of metal-induced-lateral-crystallization regions by spreading resistance probe measurements von Leung, T.C., Cheng, C.F., Myasnikov, A.M., Poon, M.C.

Volltext bestellen

Structural insights into the regulation of human serine palmitoyltransferase complexes von Wang, Yingdi, Niu, Yiming, Zhang, Zhe, Gable, Kenneth, Gupta, Sita D., Somashekarappa, Niranjanakumari, Han, Gongshe, Zhao, Hongtu, Myasnikov, Alexander G., Kalathur, Ravi C., Dunn, Teresa M., Lee, Chia-Hsueh

Volltext

Structure of Hsp90–Hsp70–Hop–GR reveals the Hsp90 client-loading mechanism von Wang, Ray Yu-Ruei, Noddings, Chari M., Kirschke, Elaine, Myasnikov, Alexander G., Johnson, Jill L., Agard, David A.

Volltext

2D Hydro‐Mechanical‐Chemical Modeling of (De)hydration Reactions in Deforming Heterogeneous Rock: The Periclase‐Brucite Model Reaction von Schmalholz, Stefan M., Moulas, Evangelos, Plümper, Oliver, Myasnikov, Artem V., Podladchikov, Yuri Y.

Volltext