Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes von Muzykov, P.G., Bolotnikov, A.V., Sudarshan, T.S.

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Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers von Maximenko, S. I., Freitas, J. A., Myers-Ward, R. L., Lew, K.-K., VanMil, B. L., Eddy, C. R., Gaskill, D. K., Muzykov, P. G., Sudarshan, T. S.

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High resistivity measurement of SiC wafers using different techniques von MUZYKOV, P. G, KHLEBNIKOV, Y. I, REGULA, S. V, GAO, Y, SUDARSHAN, T. S

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CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers von Klein, Paul B., Eddy, Charles R., Freitas, Jaime A., Maximenko, Serguei I., Muzykov, Peter G., Sudarshan, Tangali S., Lew, Kok Keong, Gaskill, D. Kurt, Picard, Yoosuf N., Myers-Ward, Rachael L.

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Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors von Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., Sudarshan, T. S.

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Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC von Zhang, Qing Chun Jon, Muzykov, Peter G., Agarwal, Anant K., Sudarshan, Tangali S., Bolotnikov, A.V.

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Layered GaTe Crystals for Radiation Detectors von Mandal, K. C., Krishna, R. M., Hayes, T. C., Muzykov, P. G., Das, S., Sudarshan, T. S., Shuguo Ma

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Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion von Bolotnikov, A.V., Muzykov, P.G., Grekov, A.E., Sudarshan, T.S.

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Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC von Bolotnikov, A. V., Muzykov, P. G., Sudarshan, T. S.

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Investigation of two-branch boron diffusion from vapor phase in n -type 4 H - Si C von Bolotnikov, A. V., Muzykov, P. G., Sudarshan, T. S.

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Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epitaxial Layer von Mandal, Krishna C., Muzykov, Peter G., Terry, J. Russell

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High field breakdown of narrow quasi uniform field gaps in vacuum von Muzykov, P. G., Ma, Xianyun, Cherednichenko, D. I., Sudarshan, T. S.

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Effect of threading screw and edge dislocations on transport propertiesof 4H-SiC homoepitaxial layers von Maximenko, S. I., Freitas, J. A., Myers-Ward, R. L., Lew, K.-K., VanMil, B. L., Eddy, C. R., Gaskill, D. K., Muzykov, P. G., Sudarshan, T. S.

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Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications von Mandal, K. C., Muzykov, P. G., Krishna, R. M., Hayes, T. C.

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Characterization of Cd0.9Zn0.1Te schottky diodes for high resolution nuclear radiation detectors von Mandal, K. C., Muzykov, P. G., Krishna, R. M., Hayes, T. C.

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Prebreakdown and breakdown investigation of needle-plane vacuum gaps in the micron/submicron regime von Muzykov, P. G., Ma, Xianyun, Sudarshan, T. S.

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High field characteristics of thin-film metal electrodes von Ma, Xianyun, Muzykov, P. G., Sudarshan, T. S.

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Effect of Threading Screw and Edge Dislocations on Transport Properties of 4H-SiC Homoepitaxial Layers von Maximenko, S I, Freitas, Jr, J A, Myers-Ward, R L, Lew, K, VanMil, B L, Eddy, Jr, C R, Gaskill, D K, Muzykov, P G, Sudarshan, T S

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Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers von Mandal, Krishna C., Muzykov, Peter G., Russell Terry, J.

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Characterization of 4H-SiC Epitaxial Layers and High-Resistivity Bulk Crystals for Radiation Detectors von Mandal, Krishna C., Muzykov, Peter G., Krishna, Ramesh M., Terry, J. Russell

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