Study of leakage current and breakdown issues in 4H–SiC unterminated Schottky diodes von Muzykov, P.G., Bolotnikov, A.V., Sudarshan, T.S.

Volltext

Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications von Feng Zhao, Islam, M.M., Muzykov, P., Bolotnikov, A., Sudarshan, T.S.

Volltext

Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0 0 0 1) Si face epilayers von Shrivastava, A., Muzykov, P., Caldwell, J.D., Sudarshan, T.S.

Volltext

Development of patterns for nanoscale strain measurements: I. Fabrication of imprinted Au webs for polymeric materials von Collette, S A, Sutton, M A, Miney, P, Reynolds, A P, Li, Xiaodong, Colavita, P E, Scrivens, W A, Luo, Y, Sudarshan, T, Muzykov, P, Myrick, M L

Volltext

Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers von Maximenko, S. I., Freitas, J. A., Myers-Ward, R. L., Lew, K.-K., VanMil, B. L., Eddy, C. R., Gaskill, D. K., Muzykov, P. G., Sudarshan, T. S.

Volltext

Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epitaxial Layer von Mandal, Krishna C., Muzykov, Peter G., Terry, J. Russell

Volltext

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers von Mandal, Krishna C., Muzykov, Peter G., Russell Terry, J.

Volltext

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers von Eddy, Charles R., Lew, Kok Keong, Gaskill, D. Kurt, Muzykov, Peter G., Freitas, Jaime A., Sudarshan, Tangali S., Maximenko, Serguei I., Myers-Ward, Rachael L., Picard, Yoosuf N., Klein, Paul B.

Volltext

Inverted Pyramid Defects in 4H-SiC Epilayers von Muzykov, Peter G., Shrivastava, Amitesh, Sudarshan, Tangali S.

Volltext

High resistivity measurement of SiC wafers using different techniques von MUZYKOV, P. G, KHLEBNIKOV, Y. I, REGULA, S. V, GAO, Y, SUDARSHAN, T. S

Volltext

Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT) von Basceri, C., Khlebnikov, Y., Muzykov, P., Stratiy, G., Silan, M., Khlebnikov, I., Sharma, M., Balkas, Cengiz M.

Volltext

Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors von Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., Sudarshan, T. S.

Volltext

Characterization of 4H-SiC Epitaxial Layers and High-Resistivity Bulk Crystals for Radiation Detectors von Mandal, Krishna C., Muzykov, Peter G., Krishna, Ramesh M., Terry, J. Russell

Volltext

Analysis of nonexponential deep-level current transients in schottky diodes fabricated on [1100] 6H-SiC von BOLOTNIKOV, A, MUZYKOV, P, SUDARSHAN, T. S

Volltext

Two-Branch Boron Diffusion from Gas Phase in n-Type 4H-SiC von Muzykov, Peter G., Sudarshan, Tangali S., Agarwal, Anant K., Zhang, Qing Chun Jon, Bolotnikov, A.V.

Volltext

Layered GaTe Crystals for Radiation Detectors von Mandal, K. C., Krishna, R. M., Hayes, T. C., Muzykov, P. G., Das, S., Sudarshan, T. S., Shuguo Ma

Volltext

Improvement of 4H-SiC Power p-i-n Diode Switching Performance Through Local Lifetime Control Using Boron Diffusion von Bolotnikov, A.V., Muzykov, P.G., Grekov, A.E., Sudarshan, T.S.

Volltext

Identification of nucleation sites and formation mechanism of inverted pyramids in 4H-SiC epilayers von Shrivastava, A., Muzykov, P., Sudarshan, T. S.

Volltext

Identification of nucleation sites and formation mechanism of inverted pyramids in 4 H -SiC epilayers von Shrivastava, A., Muzykov, P., Sudarshan, T. S.

Volltext

Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC von Bolotnikov, A. V., Muzykov, P. G., Sudarshan, T. S.

Volltext