Development and Characterization of 100 Gb/s Data Communication VCSELs von Murty, M. V. Ramana, Wang, Jingyi, Harren, Ann Lehman, Cheng, An-Nien, Dolfi, David W., Feng, Zheng-Wen, Sridhara, Aaditya, Joyo, Sumitro Taslim, Chu, Jason, Giovane, Laura M.

Volltext

In situ , real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN von Fini, P., Munkholm, A., Thompson, Carol, Stephenson, G. B., Eastman, J. A., Murty, M. V. Ramana, Auciello, O., Zhao, L., DenBaars, S. P., Speck, J. S.

Volltext

Instability in Molecular Beam Epitaxy due to Fast Edge Diffusion and Corner Diffusion Barriers von Murty, M. V. Ramana, Cooper, B. H.

Volltext

Airy function approximations to the Lorenz system von Lakshmi, B.S., Ramana Murty, M.V.

Volltext

Very low temperature (<400°C) silicon molecular beam epitaxy : the role of low energy ion irradiation von RAMANA MURTY, M. V, ATWATER, H. A, KELLOCK, A. J, BAGLIN, J. E. E

Volltext

Surface chemical potential and current-density maps during annealing von RAMANA MURTY, M. V

Volltext

Investigations of chemical vapor deposition of GaN using synchrotron radiation von THOMPSON, Carol, STEPHENSON, G. B, EASTMAN, J. A, MUNKHOLM, A, AUCIELLO, O, RAMANA MURTY, M. V, FINI, P, DENBAARS, S. P, SPECK, J. S

Volltext

Observation of nanoscale 180 degrees stripe domains in ferroelectric PbTiO3 thin films von Streiffer, S K, Eastman, J A, Fong, D D, Thompson, Carol, Munkholm, A, Ramana Murty, M V, Auciello, O, Bai, G R, Stephenson, G B

Volltext

In situ X-ray studies of vapor phase epitaxy of PbTiO3 von STEPHENSON, G. B, FONG, D. D, RAMANA MURTY, M. V, STREIFFER, S. K, EASTMAN, J. A, AUCIELLO, O, FUOSS, P. H, MUNKHOLM, A, AANERUD, M. E. M, THOMPSON, Carol

Volltext

Morphological stability of nanostructures von Murty, M. V. Ramana

Volltext

Layer-by-layer growth of GaN induced by silicon von Munkholm, A., Thompson, Carol, Ramana Murty, M. V., Eastman, J. A., Auciello, O., Stephenson, G. B., Fini, P., DenBaars, S. P., Speck, J. S.

Volltext

Sputtering: the material erosion tool von Murty, M.V.Ramana

Volltext

Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams von Murty, M.V.Ramana, Atwater, Harry A.

Volltext

Role of energetic flux in low temperature Si epitaxy on dihydride-terminated Si (001) von Taylor, M.E, Atwater, Harry A, Murty, M.V.Ramana

Volltext

Empirical interatomic potential for Si-H interactions von Ramana Murty MV, Atwater, HA

Volltext

X-Ray Scattering Study of the Surface Morphology of Au(111) during Ar + Ion Irradiation von Murty, M. V. Ramana, Curcic, T., Judy, A., Cooper, B. H., Woll, A. R., Brock, J. D., Kycia, S., Headrick, R. L.

Volltext

Influence of step edge diffusion on surface morphology during epitaxy von Ramana Murty, M.V., Cooper, B.H.

Volltext

Performance and Reliability of 12.5-Gb/s Oxide-Free 850-nm Mesa VCSELs von Murty, M.V.R., Chirovsky, L.M.F., Syn-Yem Hu, Venables, D., Cheng, M., Ciesla, C.M.

Volltext

In situ x-ray scattering study of PbTiO3 chemical-vapor deposition von Murty, M. V. Ramana, Streiffer, S. K., Stephenson, G. B., Eastman, J. A., Bai, G.-R., Munkholm, A., Auciello, O., Thompson, Carol

Volltext

Seawater Intrusion Mapping Along Penneru River Delta Area, SPS Nellore District, Andhra Pradesh—A Case Study von Kannan, R., Kanungo, Abhrankash, Murty, M. V. Ramana, Sundar, B.

Volltext