Experimental observations of the thermal stability of high-k gate dielectric materials on silicon von Lysaght, P.S., Chen, P.J., Bergmann, R., Messina, T., Murto, R.W., Huff, H.R.

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Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics von BERSUKER, G, SIM, J. H, YOUNG, C. D, CHOI, R, ZEITZOFF, P. M, BROWN, G. A, LEE, B. H, MURTO, R. W

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Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation von Al-Shareef, H. N., Karamcheti, A., Luo, T. Y., Bersuker, G., Brown, G. A., Murto, R. W., Jackson, M. D., Huff, H. R., Kraus, P., Lopes, D., Olsen, C., Miner, G.

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High-k gate stacks for planar, scaled CMOS integrated circuits von Huff, H.R., Hou, A., Lim, C., Kim, Y., Barnett, J., Bersuker, G., Brown, G.A., Young, C.D., Zeitzoff, P.M., Gutt, J., Lysaght, P., Gardner, M.I., Murto, R.W.

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Physicochemical properties of HfO2 in response to rapid thermal anneal von Lysaght, Patrick S., Foran, Brendan, Bersuker, Gennadi, Chen, Peijun J., Murto, Robert W., Huff, Howard R.

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Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices von Young, Chadwin D., Zhao, Yuegang, Pendley, Michael, Lee, Byoung Hun, Matthews, Kenneth, Sim, Jang Hoan, Choi, Rino, Brown, George A., Murto, Robert W., Bersuker, Gennadi

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Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) von Lee, B.H., Young, C.D., Choi, R., Sim, J.H., Bersuker, G., Kang, C.Y., Harris, R., Brown, G.A., Matthews, K., Song, S.C., Moumen, N., Barnett, J., Lysaght, P., Choi, K.S., Wen, H.C., Huffman, C., Alshareef, H., Majhi, P., Gopalan, S., Peterson, J., Kirsh, P., Li, H.-J., Gutt, J., Gardner, M., Huff, H.R., Zeitzoff, P., Murto, R.W., Larson, L., Ramiller, C.

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Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal von Lyaaght, P.S., Foran, B., Bersuker, G., Tichy, R., Larson, L., Murto, R.W., Huff, H.R.

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Gate Dielectrics for High Performance and Low Power CMOS SoC Applications von Cubaynes, F., Dachs, C., Detcheverry, C., Zegers, A., Venezia, V., Schmitz, J., Stolk, P., Jurczak, M., Henson, K., Degraeve, R., Rothschild, A., Conard, T., Petry, J., Da Rold, M., Schaekers, M., Badenes, G., Date, L., Pique, D., Al-Shareef, H., Murto, R.

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Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance von Young, C.D., Bersuker, G., Brown, G.A., Lim, C., Lysaght, P., Zeitzoff, P., Murto, R.W., Huff, H.R.

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High-k gate stacks for planar, scaled CMOS integrated circuits von HUFF, H. R, HOU, A, LYSAGHT, P, GARDNER, M. I, MURTO, R. W, LIM, C, KIM, Y, BARNETT, J, BERSUKER, G, BROWN, G. A, YOUNG, C. D, ZEITZOFF, P. M, GUTT, J

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Charges in HFO2 ALD gate dielectrics von BERSUKER, G, ZEITZOFF, P. M, HUFF, H. R, BROWN, G. A, KIM, Y, HOU, A, LIM, C, YOUNG, C, LYSAGHT, P, GARDNER, M, MURTO, R. W

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Integration of high-k gate stack systems into planar CMOS process flows von Huff, H.R., Agarwal, A., Kim, Y., Perrymore, L., Riley, D., Barnett, J., Sparks, C., Freiler, M., Gebara, G., Bowers, B., Chen, P.J., Lysaght, P., Nguyen, B., Lim, J.E., Lim, S., Bersuker, G., Zeitzoff, P., Brown, G.A., Young, C., Foran, B., Shaapur, F., Hou, A., Lim, C., Alshareef, H., Borthakur, S., Derro, D.J., Bergmann, R., Larson, L.A., Gardner, M.I., Gutt, J., Murto, R.W., Torres, K., Jackson, M.D.

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RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications von Veloso, A., Jurczak, M., Cubaynes, F., Rooyackers, R., Mertens, S., Rothschild, A., Schaekers, M., Al-Shareef, A., Murto, R., Dachs, C., Badenes, G.

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Subnanometer scaling of HfO2/metal electrode gate stacks von Peterson, Jeff J, Young, Chadwin D, Barnett, Joel, Gopalan, Sundar, Gutt, Jim, Lee, Choong-Ho, Li, Hong-Jyh, Hou, Luo-Hung, Kim, Yudong, Lim, Chan, Chaudhary, Nirmal, Moumen, Naim, Lee, Byoung-Hun, Bersuker, Gennadi, Brown, George A, Zeitzoff, Peter M

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Anaerobic batch digestion of solid potato waste alone and in combination with sugar beet leaves von Parawira, W, Murto, M, Zvauya, R, Mattiasson, B

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Comparative performance of a UASB reactor and an anaerobic packed-bed reactor when treating potato waste leachate von Parawira, W., Murto, M., Zvauya, R., Mattiasson, B.

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High Performance All-Polymer Photodetector Comprising a Donor–Acceptor–Acceptor Structured Indacenodithiophene–Bithieno[3,4‑c]Pyrroletetrone Copolymer von Murto, Petri, Genene, Zewdneh, Benavides, Cindy Montenegro, Xu, Xiaofeng, Sharma, Anirudh, Pan, Xun, Schmidt, Oliver, Brabec, Christoph J, Andersson, Mats R, Tedde, Sandro F, Mammo, Wendimagegn, Wang, Ergang

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Comprehensive whole-genome sequence analyses provide insights into the genomic architecture of cerebral palsy von Fehlings, Darcy L., Zarrei, Mehdi, Engchuan, Worrawat, Sondheimer, Neal, Thiruvahindrapuram, Bhooma, MacDonald, Jeffrey R., Higginbotham, Edward J., Thapa, Ritesh, Behlim, Tarannum, Aimola, Sabrina, Switzer, Lauren, Ng, Pamela, Wei, John, Danthi, Prakroothi S., Pellecchia, Giovanna, Lamoureux, Sylvia, Ho, Karen, Pereira, Sergio L., de Rijke, Jill, Sung, Wilson W. L., Mowjoodi, Alireza, Howe, Jennifer L., Nalpathamkalam, Thomas, Manshaei, Roozbeh, Ghaffari, Siavash, Whitney, Joseph, Patel, Rohan V., Hamdan, Omar, Shaath, Rulan, Trost, Brett, Knights, Shannon, Samdup, Dawa, McCormick, Anna, Hunt, Carolyn, Kirton, Adam, Kawamura, Anne, Mesterman, Ronit, Gorter, Jan Willem, Dlamini, Nomazulu, Merico, Daniele, Hilali, Murto, Hirschfeld, Kyle, Grover, Kritika, Bautista, Nelson X., Han, Kara, Marshall, Christian R., Yuen, Ryan K. C., Subbarao, Padmaja, Azad, Meghan B., Turvey, Stuart E., Mandhane, Piush, Moraes, Theo J., Simons, Elinor, Maxwell, George, Shevell, Michael, Costain, Gregory, Michaud, Jacques L., Hamdan, Fadi F., Gauthier, Julie, Uguen, Kevin, Stavropoulos, Dimitri J., Wintle, Richard F., Oskoui, Maryam, Scherer, Stephen W.

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Near‐Infrared Emission by Tuned Aggregation of a Porphyrin Compound in a Host–Guest Light‐Emitting Electrochemical Cell von Mone, Mariza, Tang, Shi, Genene, Zewdneh, Murto, Petri, Jevric, Martyn, Zou, Xianshao, Ràfols‐Ribé, Joan, Abdulahi, Birhan A., Wang, Jia, Mammo, Wendimagegn, Andersson, Mats R., Edman, Ludvig, Wang, Ergang

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