Experimental observations of the thermal stability of high-k gate dielectric materials on silicon von Lysaght, P.S., Chen, P.J., Bergmann, R., Messina, T., Murto, R.W., Huff, H.R.

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Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics von BERSUKER, G, SIM, J. H, YOUNG, C. D, CHOI, R, ZEITZOFF, P. M, BROWN, G. A, LEE, B. H, MURTO, R. W

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High-k gate stacks for planar, scaled CMOS integrated circuits von Huff, H.R., Hou, A., Lim, C., Kim, Y., Barnett, J., Bersuker, G., Brown, G.A., Young, C.D., Zeitzoff, P.M., Gutt, J., Lysaght, P., Gardner, M.I., Murto, R.W.

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Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation von Al-Shareef, H. N., Karamcheti, A., Luo, T. Y., Bersuker, G., Brown, G. A., Murto, R. W., Jackson, M. D., Huff, H. R., Kraus, P., Lopes, D., Olsen, C., Miner, G.

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Plasma nitridation of very thin gate dielectrics von Al-Shareef, H.N, Bersuker, G, Lim, C, Murto, R, Borthakur, S, Brown, G.A, Huff, H.R

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Physicochemical properties of HfO2 in response to rapid thermal anneal von Lysaght, Patrick S., Foran, Brendan, Bersuker, Gennadi, Chen, Peijun J., Murto, Robert W., Huff, Howard R.

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Ultra-Short Pulse Current–Voltage Characterization of the Intrinsic Characteristics of High-κ Devices von Young, Chadwin D., Zhao, Yuegang, Pendley, Michael, Lee, Byoung Hun, Matthews, Kenneth, Sim, Jang Hoan, Choi, Rino, Brown, George A., Murto, Robert W., Bersuker, Gennadi

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Gate Dielectrics for High Performance and Low Power CMOS SoC Applications von Cubaynes, F., Dachs, C., Detcheverry, C., Zegers, A., Venezia, V., Schmitz, J., Stolk, P., Jurczak, M., Henson, K., Degraeve, R., Rothschild, A., Conard, T., Petry, J., Da Rold, M., Schaekers, M., Badenes, G., Date, L., Pique, D., Al-Shareef, H., Murto, R.

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Activation and deactivation studies of laser thermal annealed boron, arsenic, phosphorus, and antimony ultra-shallow abrupt junctions von Murto, R., Jones, K., Rendon, M., Talwar, S.

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Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) von Lee, B.H., Young, C.D., Choi, R., Sim, J.H., Bersuker, G., Kang, C.Y., Harris, R., Brown, G.A., Matthews, K., Song, S.C., Moumen, N., Barnett, J., Lysaght, P., Choi, K.S., Wen, H.C., Huffman, C., Alshareef, H., Majhi, P., Gopalan, S., Peterson, J., Kirsh, P., Li, H.-J., Gutt, J., Gardner, M., Huff, H.R., Zeitzoff, P., Murto, R.W., Larson, L., Ramiller, C.

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An investigation of species dependence in germanium pre-amorphized and laser thermal annealed ultra-shallow abrupt junctions von Murto, R., Jones, K., Rendon, M., Talwar, S.

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Boxer cross measurements of laser annealed shallow junctions von Sing, D., Borden, P., Bechtler, L., Murto, R., Talwar, S.

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Boron diffusion upon annealing of laser thermal processed silicon von Jones, K.S., Kuryliw, E., Murto, R., Rendon, M., Talwar, S.

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Exploring the limits of pre-amorphization implants on controlling channeling and diffusion of low energy B implants and ultra shallow junction formation von Al-Bayati, A., Tandon, S., Mayur, A., Foad, M., Wagner, D., Murto, R., Sing, D., Ferguson, C., Larson, L.

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RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications von Veloso, A., Jurczak, M., Cubaynes, F., Rooyackers, R., Mertens, S., Rothschild, A., Schaekers, M., Al-Shareef, A., Murto, R., Dachs, C., Badenes, G.

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Junction profiles of sub keV ion implantation for deep sub-quarter micron devices von Al-Bayati, A., Tandon, S., Doherty, R., Murrell, A., Wagner, D., Foad, M., Adibi, B., Mickevicius, R., Menisilenko, V., Simeonov, S., Jian, A., Sing, D., Ferguson, C., Murto, R., Larson, L.

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Physical characterization of high-k gate dielectric film systems processed by RTA and spike anneal von Lyaaght, P.S., Foran, B., Bersuker, G., Tichy, R., Larson, L., Murto, R.W., Huff, H.R.

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Narrative Comprehension - A Discourse Perspective von Murto, Ritva

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Charge trapping in MOCVD hafnium-based gate field dielectric stack structures and its impact on device performance von Young, C.D., Bersuker, G., Brown, G.A., Lim, C., Lysaght, P., Zeitzoff, P., Murto, R.W., Huff, H.R.

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Sparganium angustifolium Michx

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