A field-funneling effect on the collection of alpha-particle-generated carriers in silicon devices von Hsieh, C.M., Murley, P.C., O'Brien, R.R.

Volltext

Collection of charge from alpha-particle tracks in silicon devices von Chang-Ming Hsieh, Murley, P.C., O'Brien, R.R.

Volltext

Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays von Srinivasan, G.R., Tang, H.K., Murley, P.C.

Volltext

Comments on "Two-dimensional numerical analysis of impurity atom diffusion in semiconductors" von Murley, P.C., O'Brien, R.R.

Volltext

Accurate, predictive modeling of soft error rate due to cosmic rays and chip alpha radiation von Srinivasan, G.R., Murley, P.C., Tang, H.K.

Volltext bestellen

Impurity atom distribution from a two-step diffusion process von Kennedy, D.P., Murley, P.C.

Volltext

Concentration dependent diffusion of arsenic in silicon von Kennedy, D.P., Murley, P.C.

Volltext

Analysis of epitaxial layer thickness variability in the fabrication of high performance bipolar transistors von Kennedy, D.P., Murley, P.C.

Volltext

Minority carrier injection characteristics of the diffused emitter junction von Kennedy, D.P., Murley, P.C.

Volltext

Impurity atom diffusion into finite slices of semiconductor material von Kennedy, D.P., Murley, P.C.

Volltext