Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study von Markevich, V.P., Peaker, A.R., Lastovskii, S.B., Murin, L.I., Litvinov, V.V., Emtsev, V.V., Dobaczewski, L.

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Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon von Lindström, J.L, Murin, L.I, Markevich, V.P, Hallberg, T, Svensson, B.G

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Interaction between self-interstitials and the oxygen dimer in silicon von Lindström, J.L., Hallberg, T., Hermansson, J., Murin, L.I., Komarov, B.A., Markevich, V.P., Kleverman, M., Svensson, B.G.

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Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n‐type Czochralski‐grown silicon von Vaqueiro‐Contreras, M., Markevich, V. P., Halsall, M. P., Peaker, A. R., Santos, P., Coutinho, J., Öberg, S., Murin, L. I., Falster, R., Binns, J., Monakhov, E. V., Svensson, B. G.

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Radiation-induced bistable centers with deep levels in silicon [n.sup.+]-p structures von Lastovskii, S.B, Markevich, V.P, Yakushevich, H.S, Murin, L.I, Krylov, V.P

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Oxygen loss and thermal double donor formation in germanium von Litvinov, V.V., Murin, L.I., Markevich, V.P., Peaker, A.R., Lindström, J.L.

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Influence of isotopic composition of natural silicon on local vibrational modes of vacancy-oxygen complexes von Tolkacheva, E. A., Murin, L. I.

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Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles von Makarenko, L.F., Moll, M., Evans-Freeman, J.H., Lastovski, S.B., Murin, L.I., Korshunov, F.P.

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Early stages of oxygen clustering in hydrogenated Cz-Si: IR absorption studies von Murin, L.I, Markevich, V.P, Suezawa, M, Lindström, J.L, Kleverman, M, Hallberg, T

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Thermally stable carbon–oxygen complexes in irradiated silicon crystals von Murin, L. I., Gurinovich, V. A., Medvedeva, I. F., Markevich, V. P.

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Isotopic effects on vibrational modes of thermal double donors in Si and Ge von Murin, L.I., Lindström, J.L., Markevich, V.P., Hallberg, T., Litvinov, V.V., Coutinho, J., Jones, R., Briddon, P.R., Öberg, S.

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Over-coordinated oxygen in the interstitial carbon–oxygen complex von Coutinho, J, Jones, R, Briddon, P.R, Öberg, S, Murin, L.I, Markevich, V.P, Lindström, J.L

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Formation and annealing of metastable (interstitial oxygen)-(interstitial carbon) complexes in n- and p-type silicon von Makarenko, L. F., Korshunov, F. P., Lastovskii, S. B., Murin, L. I., Moll, M., Pintilie, I.

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Local vibrational mode spectroscopy of thermal donors in germanium von Markevich, V.P, Murin, L.I, Litvinov, V.V, Kletchko, A.A, Lindström, J.L

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Photoluminescence characterization of defects created in electron-irradiated silicon at elevated temperatures von Buyanova, I.A, Monemar, B, Lindström, J.L, Hallberg, T, Murin, L.I, Markevich, V.P

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Reconfigurations and diffusion of trivacancy in silicon von Markevich, V.P., Peaker, A.R., Hamilton, B., Lastovskii, S.B., Murin, L.I., Coutinho, J., Markevich, A.V., Rayson, M.J., Briddon, P.R., Svensson, B.G.

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Complexes of the self-interstitial with oxygen in irradiated silicon:: a new assignment of the 936 cm −1 band von Hermansson, J, Murin, L.I, Hallberg, T, Markevich, V.P, Lindström, J.L, Kleverman, M, Svensson, B.G

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Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies von Murin, L.I., Lindström, J.L., Davies, G., Markevich, V.P.

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Local vibrational mode bands of V–O–H complexes in silicon von Markevich, V.P, Murin, L.I, Suezawa, M, Lindström, J.L, Coutinho, J, Jones, R, Briddon, P.R, Öberg, S

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Primary defect transformations in high-resistivity p-type silicon irradiated with electrons at cryogenic temperatures von Makarenko, L.F., Lastovski, S.B., Korshunov, F.P., Murin, L.I., Moll, M.

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