Effect of Band-to-Band Tunneling on Junctionless Transistors von Gundapaneni, S., Bajaj, M., Pandey, R. K., Murali, K. V. R. M., Ganguly, S., Kottantharayil, A.

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External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon von Majumdar, Kausik, Murali, Kota V. R. M, Bhat, Navakanta, Lin, Yu-Ming

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CMOS Logic Device and Circuit Performance of Si Gate All Around Nanowire MOSFET von Nayak, Kaushik, Bajaj, Mohit, Konar, Aniruddha, Oldiges, Philip J., Natori, Kenji, Iwai, Hiroshi, Murali, Kota V. R. M., Rao, Valipe Ramgopal

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Random Dopant Fluctuation Induced Variability in Undoped Channel Si Gate all Around Nanowire n-MOSFET von Nayak, Kaushik, Agarwal, Samarth, Bajaj, Mohit, Murali, Kota V. R. M., Rao, Valipe Ramgopal

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Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs von Pandey, R K, Murali, K V R M, Furkay, S S, Oldiges, P J, Nowak, E J

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A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current von Asra, Ram, Murali, Kota V. R. M, Rao, V. Ramgopal

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Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs von Nayak, Kaushik, Agarwal, Samarth, Bajaj, Mohit, Oldiges, Philip J., Murali, Kota V. R. M., Rao, Valipe Ramgopal

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Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study von Lanzillo, Nicholas A., Restrepo, Oscar D., Bhosale, Prasad S., Cruz-Silva, Eduardo, Yang, Chih-Chao, Youp Kim, Byoung, Spooner, Terry, Standaert, Theodorus, Child, Craig, Bonilla, Griselda, Murali, Kota V. R. M.

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Brillouin zone unfolding of complex bands in a nearest neighbour tight binding scheme von Ajoy, Arvind, Murali, Kota V R M, Karmalkar, Shreepad

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On the Electron and Hole Tunneling in a HfO2 Gate Stack With Extreme Interfacial-Layer Scaling von ANDO, Takashi, SATHAYE, Ninad D, MURALI, Kota V. R. M, CARTIER, Eduard A

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Modeling and Characterization of Gate Leakage in High-K Metal Gate Technology-Based Embedded DRAM von Bajaj, Mohit, Pandey, Rajan K., De, Sandip, Sathaye, Ninad D., Jayaraman, Balaji, Krishnan, Rishikesh, Goyal, Puneet, Furkay, Stephen S., Nowak, Edward J., Iyer, Subramanian S., Murali, Kota V. R. M.

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A Tunnel FET for V DD Scaling Below 0.6 V With a CMOS-Comparable Performance von Asra, Ram, Shrivastava, Mayank, Murali, Kota VRM, Pandey, Rajan K, Gossner, Harald, Rao, VRamgopal

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A Tunnel FET for VDD Scaling Below 0.6 V With a CMOS-Comparable Performance von ASRA, Ram, SHRIVASTAVA, Mayank, MURALI, Kota V. R. M, PANDEY, Rajan K, GOSSNER, Harald, RAMGOPAL RAO, V

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Publisher's Note: "Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor" von Gundapaneni, Suresh, Goswami, Aranya, Badami, Oves, Cuduvally, Ramya, Konar, Aniruddha, Bajaj, Mohit, Murali, Kota V. R. M.

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Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor von Gundapaneni, Suresh, Goswami, Aranya, Badami, Oves, Cuduvally, Ramya, Konar, Aniruddha, Bajaj, Mohit, Murali, Kota V. R. M.

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Multiscale model for phonon-assisted band-to-band tunneling in semiconductors von Ajoy, Arvind, Laux, S. E., Murali, Kota V. R. M., Karmalkar, Shreepad

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Gallium-nitride-based light-emitting diodes: 2014 Nobel Prize in Physics von Murali, Kota V. R. M., Naik, Vinayak Bharat, Datta, Deepanjan

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Intrinsic limits of subthreshold slope in biased bilayer graphene transistor von Majumdar, Kausik, Murali, Kota V. R. M., Bhat, Navakanta, Lin, Yu-Ming

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On the Electron and Hole Tunneling in a [Formula Omitted] Gate Stack With Extreme Interfacial-Layer Scaling von Ando, Takashi, Sathaye, Ninad D, Murali, Kota V. R. M, Cartier, Eduard A

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A Tunnel FET for [Formula Omitted] Scaling Below 0.6 V With a CMOS-Comparable Performance von Asra, Ram, Shrivastava, Mayank, Murali, Kota V. R. M, Pandey, Rajan K, Gossner, Harald, Rao, V. Ramgopal

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