Treffer 1 - 4 von 4 für Suche 'Murakuki, Y.', Suchdauer: 0,27s Treffer weiter einschränken
  1. 1
    A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure

    A 0.9-V 1T1C SBT-based embedded nonvolatile FeRAM with a reference voltage scheme and multilayer shielded bit-line structure von Yamaoka, K., Iwanari, S., Murakuki, Y., Hirano, H., Sakagami, M., Nakakuma, T., Miki, T., Gohou, Y.


    Volltext
    Artikel

    Zu den Favoriten
    Gespeichert in:
  2. 2
    A 0.9 V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure

    A 0.9 V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure von Yamaoka, K., Iwanari, S., Murakuki, Y., Hirano, H., Sakagami, M., Nakakuma, T., Miki, T., Gohou, Y.


    Volltext
    Tagungsbericht

    Zu den Favoriten
    Gespeichert in:
  3. 3
    A 0.9V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure

    A 0.9V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure von YAMAOKA, Kunisato, IWANARI, Shunichi, MURAKUKI, Yasuo, HIRANO, Hiroshige, SAKAGAMI, Masahiko, NAKAKUMA, Tetsuji, MIKI, Takashi, GOHOU, Yasushi

    Volltext
    Tagungsbericht

    Zu den Favoriten
    Gespeichert in:
  4. 4
    0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V

    0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V von Nagano, Y., Mikawa, T., Kutsunai, T., Hayashi, S., Nasu, T., Natsume, S., Tatsunari, T., Ito, T., Goto, S., Yano, H., Noma, A., Nagahashi, K., Miki, T., Sakagami, M., Izutsu, Y., Nakakuma, T., Hirano, H., Iwanari, S., Murakuki, Y., Yamaoka, K., Goho, Y., Judai, Y., Fujii, E., Sato, K.

    Volltext bestellen
    Tagungsbericht

    Zu den Favoriten
    Gespeichert in:

Suchwerkzeuge: