Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications von Müller, St.G., Sanchez, E.K., Hansen, D.M., Drachev, R.D., Chung, G., Thomas, B., Zhang, J., Loboda, M.J., Dudley, M., Wang, H., Wu, F., Byrappa, S., Raghothamachar, B., Choi, G.

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Highly-anisotropic liquid-crystal mixtures for tunable microwave devices von Weil, C., Müller, St, Scheele, P., Best, P., Lüssem, G., Jakoby, R.

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High-purity semi-insulating 4H-SiC for microwave device applications von JENNY, J. R, MALTA, D. P, MÜLLER, St. G, POWELL, A. R, TSVETKOV, V. F, HOBGOOD, H. Mcd, GLASS, R. C, CARTER, C. H

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High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method von Jenny, J. R., Müller, St G., Powell, A., Tsvetkov, V. F., Hobgood, H. M., Glass, R. C., Carter, C. H.

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The Equilibrium Constant for the Methylcyclohexane–Toluene System von Schildhauer, T, Newson, E, Müller, St

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Dislocation Content of Micropipes in SiC von Heindl, J., Dorsch, W., Strunk, H. P., Müller, St. G., Eckstein, R., Hofmann, D., Winnacker, A.

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Effect of aminophylline on cisplatin nephrotoxicity in the rat von Heidemann, H.Th, Müller, St, Mertins, L., Stepan, G., Hoffmann, K., Ohnhaus, E.E.

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Defects in SiC substrates and epitaxial layers affecting semiconductor device performance von Müller, St. G., Sumakeris, J. J., Brady, M. F., Glass, R. C., Hobgood, H. McD, Jenny, J. R., Leonard, R., Malta, D. P., Paisley, M. J., Powell, A. R., Tsvetkov, V. F., Allen, S. T., Das, M. K., Palmour, J. W., Carter, C. H.

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Progress in the industrial production of SiC substrates for semiconductor devices von Müller, St.G, Glass, R.C, Hobgood, H.M, Tsvetkov, V.F, Brady, M, Henshall, D, Malta, D, Singh, R, Palmour, J, Carter, C.H

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A cutaneous mast cell tumour in a llama (Lama glama) von Kummerfeld, M., Müller, St, Kühn, N., Castiglioni, V.

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Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE Reactor von Burk, Albert A., Brady, M.F., Paisley, Michael J., Allen, S.T., O'Loughlin, Michael J., Müller, Stephan G., Powell, Adrian R.

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Crystal structure, luminescence, and photoelectrochemistry of thin electroplated Cd-chalcogenide layers von Abramovich, M., Brasil, M.J.P., Decker, F., Moro, J.R., Motisuke, P., Mu¨ller-St, N., Salvador, P.

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Greyscale proton beam writing in p-type Gallium Arsenide von Diering, D., Spemann, D., Lenzner, J., Müller, St, Böntgen, T., von Wenckstern, H.

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Do patients with metastatic and recurrent rhabdomyosarcoma benefit from high-dose therapy with hematopoietic rescue? Report of the German/Austrian Pediatric Bone Marrow Transplanta... von KOSCIELNIAK, E, KLINGEBIEL, T. H, PETERS, C, HERMANN, J, BURDACH, S. T, BENDER-GÖTZE, C, MÜLLER-WEIHRICH, S, TREUNER, J

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The status of SiC bulk growth from an industrial point of view von Müller, St.G., Glass, R.C., Hobgood, H.M., Tsvetkov, V.F., Brady, M., Henshall, D., Jenny, J.R, Malta, D., Carter, C.H.

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Progress in SiC: from material growth to commercial device development von Carter, Jr, C.H., Tsvetkov, V.F., Glass, R.C., Henshall, D., Brady, M., Müller, St.G., Kordina, O., Irvine, K., Edmond, J.A., Kong, H.-S., Singh, R., Allen, S.T., Palmour, J.W.

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Ground state properties of the YbCu5-xAux (0 < x ≤ 1.8) solid solution von GIOVANNINI, M, SACCONE, A, MÜLLER, St, MICHOR, H, BAUER, E

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Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices von Jenny, Jason R., Calus, M.R., Tsvetkov, Valeri F., McD. Hobgood, H., Glass, R.C., Malta, D.P., Müller, Stephan G., Powell, Adrian R., Carter Jr, Calvin H.

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Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective von Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.

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Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation von Hofmann, D, Bickermann, M, Eckstein, R, Kölbl, M, Müller, St.G, Schmitt, E, Weber, A, Winnacker, A

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