Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base von Soumava Ghosh, Mukhopadhyay, Bratati, Sen, Gopa

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Modeling and Performance Analysis of a Split-Gate T-Shape Channel DM DPDG-TFET Label-Free Biosensor von Shaw, Namrata, Mukhopadhyay, Bratati

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India’s March to Halt the Emerging Cardiovascular Epidemic von Sharma, Meenakshi, Kartha, Chandrasekharan C, Mukhopadhyay, Bratati, Goyal, Ramesh K, Gupta, Suresh K, Ganguly, Nirmal K, Dhalla, Naranjan S

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Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications von Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Kumar, Harshvardhan, Chen, Qimiao, Zhang, Lin, Son, Bongkwon, Tan, Chuan Seng, Kim, Munho, Mukhopadhyay, Bratati, Chang, Guo-En

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Ge‐ and Ge1−zSnz‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors von Shaw, Namrata, Mukhopadhyay, Bratati

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Ge‐ and Ge 1− z Sn z ‐Based Gate‐Underlap Dual Material Double Gate Tunnel Field Effect Transistor: Modeling, Optimization, and its Application to Biosensors von Shaw, Namrata, Mukhopadhyay, Bratati

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Modeling Resonance-Free Modulation Response in Transistor Lasers With Single and Multiple Quantum Wells in the Base von Basu, Rikmantra, Mukhopadhyay, Bratati, Basu, P. K.

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Design and Analysis of GeSn-Based Resonant-Cavity-Enhanced Photodefectors for Optical Communication Applications von Ghosh, Soumava, Mukhopadhyay, Bratati, Chang, Guo-En

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Design and Modeling of GeSn-Based Heterojunction Phototransistors for Communication Applications von Guo-En Chang, Basu, Rikmantra, Mukhopadhyay, Bratati, Basu, Prasanta K.

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Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks von Ghosh, Soumava, Kumar, Harshvardhan, Mukhopadhyay, Bratati, Chang, Guo-En

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A Retrospective Review of Hospital-Based Data on Enteric Fever in India, 2014-2015 von Sur, Dipika, Barkume, Caitlin, Mukhopadhyay, Bratati, Date, Kashmira, Ganguly, Nirmal Kumar, Garrett, Denise

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Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy von Mukhopadhyay, Bratati, Sen, Gopa, Basu, Rikmantra, Mukhopadhyay, Shyamal, Basu, Prasanta Kumar

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Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity von Ghosh, Soumava, Bhattacharyya, Anirban, Sen, Gopa, Mukhopadhyay, Bratati

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Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1-x-ySixSny/Ge(1-a-b)Si(a)Sn(b)heterojunction von Shaw, Namrata, Mukhopadhyay, Bratati, Sen, Gopa

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Performance analysis of GeSn/SiGeSn quantum well infrared photodetector in terahertz wavelength region von Ghosh, Soumava, Mukhopadhyay, Bratati, Sen, Gopa, Basu, P.K.

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Tunnel injection transistor laser for optical interconnects von Kumar, Neetesh, Mukhopadhyay, Bratati, Basu, Rikmantra

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Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction von Shaw, Namrata, Mukhopadhyay, Bratati, Sen, Gopa

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Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectors von Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Lee, Kwang Hong, Chen, Qimiao, Son, Bongkwon, Mukhopadhyay, Bratati, Tan, Chuan Seng, Chang, Guo-En

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Design and Analysis of GeSn-Based Resonant-Cavity-Enhanced Photodetectors for Optical Communication Applications von Ghosh, Soumava, Mukhopadhyay, Bratati, Chang, Guo-En

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Predicted performance of Ge/GeSn hetero-phototransistors on Si substrate at 1.55μm von Basu, Rikmantra, Chakraborty, Vedatrayee, Mukhopadhyay, Bratati, Basu, P. K.

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