Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation von Vlasenko, N. A., Oleksenko, P. F., Mukhlyo, M. A., Veligura, L. I.

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Effect of erbium fluoride doping on the photoluminescence of SiOx films von Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.

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Effect of erbium fluoride doping on the photoluminescence of SiO x films von Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.

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Electronic states on silicon surface after deposition and annealing of SiOx films von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.

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Effect of erbium fluoride doping on the photoluminescence of SiO{sub x} films von Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Strelchuk, V. V., Oleksenko, P. F., Veligura, L. I., Nikolenko, A. S., Mukhlyo, M. A.

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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO{sub x} Films after Low-Temperature Annealing von Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.

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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiOx Films after Low-Temperature Annealing von Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.

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Specific Features and Nature of the 890 nm Photoluminescence Band Detected in SiO x Films after Low-Temperature Annealing von Vlasenko, N. A., Sopinskii, N. V., Gule, E. G., Manoilov, E. G., Oleksenko, P. F., Veligura, L. I., Mukhlyo, M. A.

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Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO{sub x} Films' von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.

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Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films” von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.

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Electronic states on silicon surface after deposition and annealing of SiO{sub x} films von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.

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Electronic states on silicon surface after deposition and annealing of SiO x films von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.

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Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiOx Films” von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Sopinskii, N. V., Veligura, L. I., Gule, E. G., Litvin, O. S., Mukhlyo, M. A.

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Stimulated emission of Cr2+ ions in ZnS:Cr thin-film electroluminescent structures von Vlasenko, N. A.

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Influence of the preparation and excitation conditions of ZnS:Er,F TFELS on the radiative characteristics in the visible and near-infrared spectral regions von Vlasenko, N. A., Veligura, L. I., Denisova, Z. L., Mukhlyo, M. A., Tsyrkunov, Yu. A., Zinchenko, V. F., Bagazky, A. V.

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On a new type electrically pumped lasers with impact excitation mechanism von Vlasenko, N. A., Oleksenko, P. F., Stronski, A. V., Mukhlyo, M. A.

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Cr-related energy levels and mechanism of Cr2+ ion photorecharge in ZnS:Cr von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Mukhlyo, M. O., Veligura, L. I.

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Cr‐related energy levels and mechanism of Cr 2+ ion photorecharge in ZnS:Cr von Vlasenko, N. A., Oleksenko, P. F., Denisova, Z. L., Mukhlyo, M. O., Veligura, L. I.

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Laser oscillation in Cr2+ :ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism von Vlasenko, N.A.

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