NIR Schottky Photodetectors Based on Individual Single-Crystalline GeSe Nanosheet von Mukherjee, Bablu, Cai, Yongqing, Tan, Hui Ru, Feng, Yuan Ping, Tok, Eng Soon, Sow, Chorng Haur

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Complex electrical permittivity of the monolayer molybdenum disulfide (MoS_2) in near UV and visible von Mukherjee, Bablu, Tseng, Frank, Gunlycke, Daniel, Amara, Kiran Kumar, Eda, Goki, Simsek, Ergun

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Reversible hysteresis inversion in MoS2 field effect transistors von Kaushik, Naveen, Mackenzie, David M. A., Thakar, Kartikey, Goyal, Natasha, Mukherjee, Bablu, Boggild, Peter, Petersen, Dirch Hjorth, Lodha, Saurabh

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Enhanced Quantum Efficiency in Vertical Mixed-Thickness n‑ReS2/p‑Si Heterojunction Photodiodes von Mukherjee, Bablu, Zulkefli, Amir, Hayakawa, Ryoma, Wakayama, Yutaka, Nakaharai, Shu

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Plasmonics Enhanced Average Broadband Absorption of Monolayer MoS2 von Mukherjee, Bablu, Simsek, Ergun

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Area-selective plasma-enhanced atomic layer etching (PE-ALE) of silicon dioxide using a silane coupling agent von Osonio, Airah P., Tsutsumi, Takayoshi, Oda, Yoshinari, Mukherjee, Bablu, Borude, Ranjit, Kobayashi, Nobuyoshi, Hori, Masaru

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Utilization of monolayer MoS2 in Bragg stacks and metamaterial structures as broadband absorbers von Mukherjee, Bablu, Simsek, Ergun

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Visibility of atomically-thin layered materials buried in silicon dioxide von Simsek, Ergun, Mukherjee, Bablu

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Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures von Mukherjee, Bablu, Zulkefli, Amir, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka, Nakaharai, Shu

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Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications von Thakar, Kartikey, Mukherjee, Bablu, Grover, Sameer, Kaushik, Naveen, Deshmukh, Mandar, Lodha, Saurabh

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Utilization of monolayer MoS sub(2) in Bragg stacks and metamaterial structures as broadband absorbers von Mukherjee, Bablu, Simsek, Ergun

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Synthesis, characterization and electrical properties of hybrid Zn2GeO4–ZnO beaded nanowire arrays von Mukherjee, Bablu, Varghese, Binni, Zheng, Minrui, Karthik, K.R.G., Mathews, Nripan, Mhaisalkar, Subodh G., Tok, Eng Soon, Sow, Chorng Haur

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Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS2‑FETs under Light-Assisted and Gate-Bias Tunable Operation von Zulkefli, Amir, Mukherjee, Bablu, Sahara, Ryoji, Hayakawa, Ryoma, Iwasaki, Takuya, Wakayama, Yutaka, Nakaharai, Shu

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Topographically-selective atomic layer etching of SiO2 using radical fluorination of the surface followed by Ar ion bombardment von Osonio, Airah, Tsutsumi, Takayoshi, Mukherjee, Bablu, Borude, Ranjit, Kobayashi, Nobuyoshi, Hori, Masaru

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Enhanced Selectivity in Volatile Organic Compound Gas Sensors Based on ReS 2 -FETs under Light-Assisted and Gate-Bias Tunable Operation von Zulkefli, Amir, Mukherjee, Bablu, Sahara, Ryoji, Hayakawa, Ryoma, Iwasaki, Takuya, Wakayama, Yutaka, Nakaharai, Shu

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Topographically-selective atomic layer etching of SiO 2 using radical fluorination of the surface followed by Ar ion bombardment von Osonio, Airah, Tsutsumi, Takayoshi, Mukherjee, Bablu, Borude, Ranjit, Kobayashi, Nobuyoshi, Hori, Masaru

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Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS 2 /h‐BN/Graphene Heterostructures von Mukherjee, Bablu, Zulkefli, Amir, Watanabe, Kenji, Taniguchi, Takashi, Wakayama, Yutaka, Nakaharai, Shu

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Photocurrent characteristics of individual GeSe2 nanobelt with Schottky effects von Mukherjee, Bablu, Tok, Eng Soon, Sow, Chorng Haur

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Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors von Zulkefli, Amir, Mukherjee, Bablu, Iwasaki, Takuya, Hayakawa, Ryoma, Nakaharai, Shu, Wakayama, Yutaka

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Light‐Assisted and Gate‐Tunable Oxygen Gas Sensor Based on Rhenium Disulfide Field‐Effect Transistors von Zulkefli, Amir, Mukherjee, Bablu, Hayakawa, Ryoma, Iwasaki, Takuya, Nakaharai, Shu, Wakayama, Yutaka

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