Surface migration induced self-aligned InAs islands grown by molecular beam epitaxy von Mui, D. S. L., Leonard, D., Coldren, L. A., Petroff, P. M.

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Electron cyclotron resonance assisted low temperature ultrahigh vacuum chemical vapor deposition of Si using silane von MUI, D. S. L, FANG, S. F, MORKOC, H

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Electrical characteristics of Si3N4/Si/GaAs metal-insulator-semiconductor capacitor von MUI, D. S. L, LIAW, H, DEMIREL, A. L, STRITE, S, MORKOC, H

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Effect of thin Ge layer on the surface depletion in GaAs von MUI, D. S. L, SALVADOR, A, STRITE, S, MORKOC, H

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Investigations of the Si3N4/Si/n-GaAs insulator-semiconductor interface with low interface trap density von MUI, D. S. L, BISWAS, D, REED, J, DEMIREL, A. L, STRITE, S, MORKOC, H

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Wafer Surface Charging Model for Single-Wafer Wet-Spin Processes von Mui, D. S. L., Lenz, E. H., Cyterski, C., Venkataraman, K., Kawaguchi, M.

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Explicit formulas of normalized radiation modes in multilayer waveguides von San-Liang Lee, Mui, S.D.L., Coldren, L.A.

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Low regrowth–interface recombination rates in InGaAs–GaAs buried ridge lasers fabricated by in   situ processing von Strand, T. A., Thibeault, B. J., Mui, D. S. L., Coldren, L. A., Petroff, P. M., Hu, E. L.

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A new circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation von MUI, D. S. L, REED, J, BISWAS, D, MORKOC, H

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Etching With Aqueous HF: Design and Development of a Laboratory-Scale Integrated Wet Etch/Dry Reactor von Pande, A A, Mui, D S L, Hess, D W

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Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability von MUI, D. S. L, WANG, Z, BISWAS, D, DEMIREL, A. L, TERAGUCHI, N, REED, J, MORKOC, H

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Use of methane in an electron cyclotron resonance plasma source for carbon delta-doping in GaAs molecular beam epitaxy von Mui, D. S. L., Evans, K. R., Fang, S. F., Biswas, D., Morkoç, H.

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Gate quality Si3N4/Si/n-In0.53Ga0.47As metal-insulator-semiconductor capacitors von WANG, Z, MUI, D. S. L, DEMIREL, A. L, BISWAS, D, REED, J, MORKOC, H

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Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor von Mui, D. S. L., Patil, M. B., Morkoc, H.

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Mobility degradation and transferred electron effect in gallium arsenide and indium gallium arsenide von Arora, V.K., Mui, D.S.L., Morkoc, H.

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A review of III–V semiconductor based metal-insulator-semiconductor structures and devices von Mui, D.S.L., Wang, Z., Morkoç, H.

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Line-profile and critical-dimension monitoring using a normal incidence optical CD metrology von Yang, Weidong, Hu, Jiangtao, Lowe-Webb, R, Korlahalli, R, Shivaprasad, D, Sasano, H, Liu, Wei, Mui, D S L

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Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer von Costa, J. C., Williamson, F., Miller, T. J., Beyzavi, K., Nathan, M. I., Mui, D. S. L., Strite, S., Morkoç, H.

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A review of III-V semiconductor based metal-insulator-semiconductor structures and devices: Properties and preparation of emerging device heterostructures von MUI, D. S. L, WANG, Z, MORKOC, H

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Sputtered SiN x film for self-aligned Si-Zn diffusion into GaAs and AlGaAs von Zou, W. X., Boudreau, R., Han, H. T., Bowen, T., Shi, Song Stone, Mui, D. S. L., Merz, J. L.

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