High operating temperature plasmonic infrared detectors von Nordin, L., Muhowski, A. J., Wasserman, D.

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All-epitaxial guided-mode resonance mid-wave infrared detectors von Kamboj, A., Nordin, L., Petluru, P., Muhowski, A. J., Woolf, D. N., Wasserman, D.

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Pushing the performance limits of long wavelength interband cascade lasers using innovative quantum well active regions von Shen, Yixuan, Massengale, J. A., Yang, Rui Q., Hawkins, S. D., Muhowski, A. J.

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Photoluminescence from InSb1−xBix alloys at extended wavelengths on InSb von White, R. C., Nordin, L. J., Muhowski, A. J., Wasserman, D., Bank, S. R.

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All-epitaxial resonant cavity enhanced long-wave infrared detectors for focal plane arrays von Petluru, P., Muhowski, A. J., Kamboj, A., Mansfield, N. C., Bergthold, M., Shaner, E. A., Klem, J. F., Wasserman, D.

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Minority carrier lifetimes in digitally-grown, narrow-gap, AlInAsSb alloys von Muhowski, A. J., March, S. D., Maddox, S. J., Wasserman, D., Bank, S. R.

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All-epitaxial long-range surface plasmon polariton structures with integrated active materials von Nordin, L., Petluru, P., Muhowski, A. J., Shaner, E. A., Wasserman, D.

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Cascaded InGaSb quantum dot mid-infrared LEDs von Muhowski, A. J., Kamboj, A., Briggs, A. F., Nordin, L., Bank, S. R., Wasserman, D.

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Measurement of recombination mechanisms in mid-infrared W-superlattices von Bogh, C. L., Muhowski, A. J., Nelson, M. D., Rodgers, V. G. J., Prineas, J. P.

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Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon von Muhowski, A.J., Bogh, C.L., Heise, R.L., Boggess, T.F., Prineas, J.P.

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Continuous wave interband cascade lasers near 13 μm von Shen, Yixuan, Yang, Rui Q., Hawkins, S. D., Muhowski, A. J.

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Internal quantum efficiency in 6.1 Å superlattices of 77% for mid-wave infrared emitters von Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

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Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters von Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

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Quantum enhanced Josephson junction field-effect transistors for logic applications von Pan, W., Muhowski, A.J., Martinez, W.M., Sovinec, C.L.H., Mendez, J.P., Mamaluy, D., Yu, W., Shi, X., Sapkota, K., Hawkins, S.D., Klem, J.F.

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High operating temperature plasmonic infrared detectors von Nordin, L, Muhowski, A J, Wasserman, D

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n-type anode layer, high-power MWIR superlattice LED von Muhowski, A. J., Ricker, R. J., Boggess, T. F., Prineas, J. P.

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All-epitaxial long-range surface plasmon polariton structures with integrated active materials von Nordin, L., Petluru, P., Muhowski, A. J., Shaner, E. A., Wasserman, D.

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Quantum Enhanced Josephson Junction Field-Effect Transistors for Logic Applications von Pan, W, Muhowski, A J, Martinez, W M, Sovinec, C L H, Mendez, J P, Mamaluy, D, W Yu, Shi, X, Sapkota, K, Hawkins, S D, Klem, J F

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Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects von Pan, W, Sapkota, K. R, Lu, P, Muhowski, A. J, Martinez, W. M, Sovinec, C. L. H, Reyna, R, Mendez, J. P, Mamaluy, D, Hawkins, S. D, Klem, J. F, Smith, L. S. L, Temple, D. A, Enderson, Z, Jiang, Z, Rossi, E

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Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects von Pan, W, Sapkota, K R, P Lu, Muhowski, A J, Martinez, W M, Sovinec, C L H, Reyna, R, Mendez, J P, Mamaluy, D, Hawkins, S D, Klem, J F, Smith, L S L, Temple, D A, Enderson, Z, Jiang, Z, Rossi, E

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