Improvement of Porous GaAs (100) Structure through Electrochemical Etching Based on DMF Solution von Md Taib, Muhamad Ikram, Hassan, Z., Zainal, Norzaini

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Introduction of dislocation filtering with different ammonia flows in low-temperature grown AlN (< 1200 °C) von Yusuf, Yusnizam, Md Taib, Muhamad Ikram, Azmi, Nor Syafiqah, Ahmad, Mohd Anas, Zainal, Norzaini

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Two-Step GaN Layer Growth for High-Voltage Lateral AlGaN/GaN HEMT von Yusuf, Yusnizam, Samsudin, Muhammad Esmed Alif, Taib, Muhamad Ikram Md, Ahmad, Mohd Anas, Mohamed, Mohamed Fauzi Packeer, Kawarada, Hiroshi, Falina, Shaili, Zainal, Norzaini, Syamsul, Mohd

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Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes von Abdul Rais, Shamsul Amir, Hassan, Zainuriah, Abu Bakar, Ahmad Shuhaimi, Abd Rahman, Mohd Nazri, Yusuf, Yusnizam, Md Taib, Muhamad Ikram, Sulaiman, Abdullah Fadil, Hussin, Hayatun Najiha, Ahmad, Mohd Fairus, Norizan, Mohd Natashah, Nagai, Keiji, Akimoto, Yuka, Shoji, Dai

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Luminescence and Crystalline Properties of InGaN-based LED on Si Substrate with AlN/GaN Superlattice Structure von Alias, Ezzah Azimah, Taib, Muhamad Ikram Md, Bakar, Ahmad Shuhaimi Abu, Egawa, Takashi, Kent, Anthony J, Kamil, Wan Maryam Wan Ahmad, Zainal, Norzaini

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Fabrication of Deep Green Light Emitting Diode on Bulk Gallium Nitride Substrate von Abdul Rais, Shamsul Amir bin, Hassan, Zainuriah, Abu Bakar, Ahmad Shuhaimi bin, Abdul Rahman, Muhammad Nazri bin, Yusuf, Yusnizam bin, bin Md Taib, Muhamad Ikram, bin Sulaiman, Abdullah Fadil, binti Hussin, Hayatun Najiha, bin Ahmad, Mohd Fairus

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Freestanding patterned polycrystalline GaN substrate by a straightforward and affordable technique von Zainal, N., Samsudin, M.E.A., Taib, Muhamad Ikram Md, Ahmad, M.A., Ariff, A., Alwadai, N., Roqan, I.S.

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METHOD OF PRODUCING A FREESTANDING BULK POLYCRYSTALLINE GALLIUM NITRIDE SUBSTRATE von Muhammad Esmed Alif Samsudin, Azharul Ariff Kamarulzaman, Zainuriah Hassan, Ezzah Azimah Alias, Norzaini Zainal, Muhamad Ikram Md Taib, Siti Nurul Waheeda Mohmad Zaini

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To develop porous Si as substrate for better quality GaN layer von Zainal, N., Radzali, R., Samsudin, M. E. A., Taib, M. I. M., Ramizy, A., Hassan, Z.

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