Interfacial Thermal Conductance across Room-Temperature-Bonded GaN/Diamond Interfaces for GaN-on-Diamond Devices von Cheng, Zhe, Mu, Fengwen, Yates, Luke, Suga, Tadatomo, Graham, Samuel

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Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices von Mu, Fengwen, He, Ran, Suga, Tadatomo

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Graphene and Graphene-Based Nanomaterials for DNA Detection: A Review von Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

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High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces von Mu, Fengwen, Cheng, Zhe, Shi, Jingjing, Shin, Seongbin, Xu, Bin, Shiomi, Junichiro, Graham, Samuel, Suga, Tadatomo

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GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off von Mu, Fengwen, Morino, Yuki, Jerchel, Kathleen, Fujino, Masahisa, Suga, Tadatomo

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Direct wafer bonding of Ga2O3–SiC at room temperature von Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Ou, Xin, Suga, Tadatomo

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Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments von Guo, Fuqiang, Huang, Sen, Wang, Xinhua, Luan, Tiantian, Shi, Wen, Deng, Kexin, Fan, Jie, Yin, Haibo, Shi, Jingyuan, Mu, Fengwen, Wei, Ke, Liu, Xinyu

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Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer von Takeuchi, Kai, Mu, Fengwen, Matsumoto, Yoshiie, Suga, Tadatomo

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Sequential Plasma Activation for Low Temperature Bonding of Aluminosilicate Glass von Takeuchi, Kai, Mu, Fengwen, Yamauchi, Akira, Suga, Tadatomo

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Low temperature Cu bonding with large tolerance of surface oxidation von Ren, Hui, Mu, Fengwen, Shin, Seongbin, Liu, Lei, Zou, Guisheng, Suga, Tadatomo

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Low-temperature bonding of surface-activated polyimide to Cu Foil in Pt-catalyzed formic acid atmosphere von Meng, Ying, Xu, Yang, Gao, Runhua, Wang, Xinhua, Chen, Xiaojuan, Huang, Sen, Wei, Ke, Wang, Dahai, Yin, Haibo, Takeuchi, Kai, Suga, Tadatomo, Mu, Fengwen, Liu, Xinyu

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Development of a numerical model for simulating stress corrosion cracking in spent nuclear fuel canisters von Wu, Xin, Mu, Fengwen, Gordon, Scott, Olson, David, Liu, Stephen, Shayer, Zeev, Yu, Zhenzhen

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Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices von Mu, Fengwen, Wang, Yinghui, He, Ran, Suga, Tadatomo

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Cu-Cu Thermocompression Bonding with a Self-Assembled Monolayer as Oxidation Protection for 3D/2.5D System Integration von Lykova, Maria, Panchenko, Iuliana, Schneider-Ramelow, Martin, Suga, Tadatomo, Mu, Fengwen, Buschbeck, Roy

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Silicon carbide wafer bonding by modified surface activated bonding method von Suga, Tadatomo, Mu, Fengwen, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline β-Ga2O3 thin film on SiC von Xu, Wenhui, You, Tiangui, Wang, Yibo, Shen, Zhenghao, Liu, Kang, Zhang, Lianghui, Sun, Huarui, Qian, Ruijie, An, Zhenghua, Mu, Fengwen, Suga, Tadatomo, Han, Genquan, Ou, Xin, Hao, Yue, Wang, Xi

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Author Correction: Development of a numerical model for simulating stress corrosion cracking in spent nuclear fuel canisters von Wu, Xin, Mu, Fengwen, Gordon, Scott, Olson, David, Liu, Stephen, Shayer, Zeev, Yu, Zhenzhen

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Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface von Lin, Jiajie, You, Tiangui, Jin, Tingting, Liang, Hao, Wan, Wenjian, Huang, Hao, Zhou, Min, Mu, Fengwen, Yan, Youquan, Huang, Kai, Zhao, Xiaomeng, Zhang, Jiaxiang, Wang, Shumin, Gao, Peng, Ou, Xin

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Heterogeneous GaN-Si integration via plasma activation direct bonding von Matsumae, Takashi, Fengwen, Mu, Fukumoto, Shoya, Hayase, Masanori, Kurashima, Yuichi, Higurashi, Eiji, Takagi, Hideki, Suga, Tadatomo

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Robust Ag-Cu Sintering Bonding at 160 °C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor von He, Liangliang, Li, Junlong, Wu, Xin, Mu, Fengwen, Wang, Yinghui, Lu, Yangting, Suga, Tadatomo

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