External cavity wavelength tunable semiconductor lasers - a review von Mroziewicz, B.

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Measurements and analysis of antireflection coatings reflectivity related to external cavity lasers von Pruszyńska-Karbownik, E., Mroziewicz, B.

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Analysis of threshold current and wall-plug efficiency of diode lasers with asymmetric facet reflectivity von MROZIEWICZ, B, ZBROSZCZYK, M, BUGAJSKI, M

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Vertical beam divergence of double-barrier multiquantum well (DBMQW) (AlGa)As heterostructure lasers von Malag, A., Mroziewicz, B.

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A simple method of mesa fabrication on DBR containing heterostructures von Górska, M., Wrzesińska, H., Muszalski, J., Ratajczak, J., Mroziewicz, B.

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Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy von Piwoński, T., Sajewicz, P., Kubica, J. M., Zbroszczyk, M., Regiński, K., Mroziewicz, B., Bugajski, M.

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Resonant Cavity Enhanced Photonic Devices von Bugajski, M., Muszalski, J., Ochalski, T., Kątcki, J., Mroziewicz, B.

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A theory of broad-area semiconductor lasers with modal reflectors von Szymanski, M, Kubica, J M, Szczepanski, P, Mroziewicz, B

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Double-frequency external cavity laser with a singular optical semiconductor amplifier von Kowalczyk, E., Szyjer, M., Fronc, K., Mroziewicz, B.

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Diode lasers for light-wave systems von Mroziewicz, B.

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Photon-detectors: An overview of technology von Mroziewicz, B.

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Minority carrier diffusion length in LPE InxGa1−xP: N layers (x < 0.01) von Haefner, H., Oelgart, G., Kaniewski, J., Mroziewicz, B.

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A novel method of recording high frequency circular gratings von Mroziewicz, Bohdan, Janowska-Dmoch, Bożena, Tkaczyk, Tomasz, Górska, Marianna

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Long wavelength (1.02-1.03 /spl mu/m) InGaAs/GaAs lasers fabricated by MBE von Piwonski, T., Sajewicz, P., Kubica, J.M., Reginski, K., Mroziewicz, B., Bugajski, M.

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The influence of different heat sources on temperature distributions in broad-area diode lasers von Szymanski, M., Zbroszczyk, M., Mroziewicz, B.

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Correlation between nitrogen concentration and In content in In x Ga1− x P liquid phase epitaxy layers von Grembowicz, J. T., Pastuszka, B., Kaniewski, J., Mroziewicz, B.

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Correlation between nitrogen concentration and In content in In sub(x)Ga sub(1-x)P liquid phase epitaxy layers von Grembowicz, J T, Pastuszka, B, Kaniewski, J, Mroziewicz, B

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A novel technique for investigation of luminescence properties of Ga 1-x In x P LPE layers with a small In content von Kaniewski, J, Warminski, T, Bugajski, M, Mroziewicz, B

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Minority carrier diffusion length in LPE In xGa 1− xP: N layers ( x < 0.01) von Haefner, H., Oelgart, G., Kaniewski, J., Mroziewicz, B.

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Highly reliable CW strained layer InGaAs/GaAs (/spl lambda/=980 nm) SCH SQW lasers fabricated by MBE von Sajewicz, P., Piwonski, T., Reginski, K., Mroziewicz, B., Bugajski, M.

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