Indices of refraction of InGaAs/Alas/AlAsSb multiple-quantum-wells measured by an optical waveguide technique von Mozume, T.

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High-resolution X-ray diffraction analysis of InGaAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy von Mozume, T., Gozu, S.

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Absorption Dynamics in All-Optical Switch Based on Intersubband Transition in InGaAs-AlAs-AlAsSb Coupled Quantum Wells von Simoyama, T., Sekiguchi, S., Yoshida, H., Jun-ichi Kasai, Mozume, T., Ishikawa, H.

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Enhancement of All-Optical Cross Phase Modulation in InGaAs/AlAsSb Coupled Quantum Wells Using InAlAs Coupling Barriers von Nagase, M., Akimoto, R., Simoyama, T., Guangwei, C., Mozume, T., Hasama, T., Ishikawa, H.

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Surface photovoltage and photoreflectance study of InGaAs/AlAsSb quantum wells von Mozume, T., Gozu, S.

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Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells von Sasayama, K., Nakanishi, S., Yamaguchi, R., Oyanagi, Y., Ushimi, T., Gozu, S., Mozume, T., Tackeuchi, A.

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Growth of InGaAs/AlAsSb single quantum wells with various AlAs diffusion-stopping layers von Kasai, J., Mozume, T.

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Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy von Mozume, T., Kasai, J.

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1.55-μm picosecond all-optical switching by using intersubband absorption in InGaAs-AlAs-AlAsSb coupled quantum wells von Akiyama, T., Georgiev, N., Mozume, T., Yoshida, H., Gopal, A.V., Wada, O.

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Strong carrier localization in Sb-terminated InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy von Mozume, T

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Indices of refraction of AlGaAsSb by an optical waveguide technique von Mozume, T., Simoyama, T., Ishikawa, H.

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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy von Mozume, T., Kasai, J.

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Photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy von Mozume, T., Kasai, J., Nagase, M., Simoyama, T., Ishikawa, H.

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Optical functions of AlAsSb characterized by spectroscopic ellipsometry von Mozume, T., Tanaka, M., Yoshimi, A., Susaki, W.

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Nonlinearity and recovery time of 1.55 mu m intersubband absorption in InGaAs/AlAs/AlAsSb coupled quantum wells von Akiyama, T, Georgiev, N, Mozume, T, Yoshida, H, Gopal, A Venu, Wada, O

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Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy von Mozume, T, Georgiev, N, Yoshida, H

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Interband transitions in strained InGaAs/AlAsSb multiple-quantum-well structures von Mozume, T., Gozu, S.

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Interface control of InGaAs/AlAsSb heterostructures von Mozume, T, Georgiev, N

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Intersubband transitions at 1.3 and 1.55 μm in a novel coupled InGaAs-AlAsSb double-quantum-well structure von Neogi, A., Mozume, T., Yoshida, H., Wada, O.

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Intersubband absorption saturation in InGaAs-AlAsSb quantum wells von Gopal, A.V., Yoshida, H., Neogi, A., Georgiev, N., Mozume, T.

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