SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications von Skolnick, M S, Mowbray, D J

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Oxidation of CO and H2 by O2 and N2O on Au/TiO2 catalysts in microreactors von Walther, G., Mowbray, D.J., Jiang, T., Jones, G., Jensen, S., Quaade, U.J., Horch, S.

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Temperature-Dependent Gain and Threshold in P-Doped Quantum Dot Lasers von Smowton, P.M., Sandall, I.C., Mowbray, D.J., Hui Yun Liu, Hopkinson, M.

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Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures von Hasbullah, N.F., Jo Shien Ng, Hui-Yun Liu, Hopkinson, M., David, J., Badcock, T.J., Mowbray, D.J.

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Recent developments in the physics and applications of self-assembled quantum dots von Skolnick, M.S, Mowbray, D.J

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Recombination mechanisms in 1.3-[mu]m InAs quantum-dot lasers von I.C. Sandall, I.C. Sandall, P.M. Smowton, P.M. Smowton, C.L. Walker, C.L. Walker, H.Y. Liu, H.Y. Liu, M. Hopkinson, M. Hopkinson, D.J. Mowbray, D.J. Mowbray

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High-performance three-layer 1.3-[mu]m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents von H.Y. Liu, H.Y. Liu, D.T. Childs, D.T. Childs, T.J. Badcock, T.J. Badcock, K.M. Groom, K.M. Groom, I.R. Sellers, I.R. Sellers, M. Hopkinson, M. Hopkinson, R.A. Hogg, R.A. Hogg, D.J. Robbins, D.J. Robbins, D.J. Mowbray, D.J. Mowbray, M.S. Skolnick, M.S. Skolnick

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Improved temperature performance of 1.31-[mu]m quantum dot lasers by optimized ridge waveguide design von S.K. Ray, S.K. Ray, K.M. Groom, K.M. Groom, R.A. Hogg, R.A. Hogg, H.Y. Liu, H.Y. Liu, M. Hopkinson, M. Hopkinson, T. Badcock, T. Badcock, D.J. Mowbray, D.J. Mowbray, M.S. Skolnick, M.S. Skolnick

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High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents von Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J., Skolnick, M.S.

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Scanning Tunneling Microscopy Evidence for the Dissociation of Carbon Monoxide on Ruthenium Steps von Tison, Yann, Nielsen, Kenneth, Mowbray, Duncan J, Bech, Lone, Holse, Christian, Calle-Vallejo, Federico, Andersen, Kirsten, Mortensen, Jens J, Jacobsen, Karsten W, Nielsen, Jane H

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Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots von Oulton, R., Tartakovskii, A.I., Ebbens, A., Finley, J.J., Mowbray, D.J., Skolnick, M.S., Hopkinson, M.

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Systematic Study of the Effects of Modulation p-Doping on 1.3- \mu} Quantum-Dot Lasers von Alexander, R.R., Childs, D.T.D., Agarwal, H., Groom, K.M., Hui-Yun Liu, Hopkinson, M., Hogg, R.A., Ishida, M., Yamamoto, T., Sugawara, M., Arakawa, Y., Badcock, T.J., Royce, R.J., Mowbray, D.J.

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Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots von Monte, A.F.G., Finley, J.J., Whittaker, D.M., Itskevitch, I., Mowbray, D.J., Skolnick, M.S., Sales, F.V., Hopkins, M.

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InGaN/GaN quantum wells with low growth temperature GaN cap layers von Pendlebury, S.T., Parbrook, P.J., Mowbray, D.J., Wood, D.A., Lee, K.B.

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Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots von Fry, P.W., Mowbray, D.J., Itskevich, I.E., Skolnick, M.S., Barker, J.A., O'Reilly, E.P., Hopkinson, M., Al-Khafaji, M., David, J.P.R., Cullis, A.G., Hill, G.

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Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers von Marko, I.P., Adams, A.R., Sweeney, S.J., Mowbray, D.J., Skolnick, M.S., Liu, H.Y., Groom, K.M.

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Wake effect in interactions of fast ions with carbon nanotubes von Mowbray, D.J., Mišković, Z.L., Goodman, F.O., Wang, You-Nian

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Exciton-phonon interactions in quantum wells and superlattices von Nash, K.J., Mowbray, D.J.

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Recombination mechanisms in 1.3-μm InAs quantum-dot lasers von Sandall, I.C., Smowton, P.M., Walker, C.L., Liu, H.Y., Hopkinson, M., Mowbray, D.J.

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Dynamic interactions of fast ions with carbon nanotubes von Mowbray, D.J., Chung, Sangwoo, Mišković, Z.L., Goodman, F.O., Wang, You-Nian

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