Two-dimensional electron gas in monolayer InN quantum wells von Pan, W., Dimakis, E., Wang, G. T., Moustakas, T. D., Tsui, D. C.

Volltext

Formation of large-area freestanding gallium nitride substrates by natural stress-induced separation of GaN and sapphire von Williams, Adrian D., Moustakas, T.D.

Volltext

Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells von Dimakis, E., Nikiforov, A. Yu, Thomidis, C., Zhou, L., Smith, D. J., Abell, J., Kao, C.-K., Moustakas, T. D.

Volltext

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy von Colakerol, Leyla, Veal, T D, Jeong, Hae-Kyung, Plucinski, Lukasz, DeMasi, Alex, Learmonth, Timothy, Glans, Per-Anders, Wang, Shancai, Zhang, Yufeng, Piper, L F J, Jefferson, P H, Fedorov, Alexei, Chen, Tai-Chou, Moustakas, T D, McConville, C F, Smith, Kevin E

Volltext

Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy von Iliopoulos, E., Moustakas, T. D.

Volltext

Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy von Xu, Tao, Nikiforov, A. Yu, France, Ryan, Thomidis, Christos, Williams, Adrian, Moustakas, T. D.

Volltext

The role of dislocations as nonradiative recombination centers in InGaN quantum wells von Abell, Josh, Moustakas, T. D.

Volltext

Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition von Singh, R., Doppalapudi, D., Moustakas, T. D., Romano, L. T.

Volltext

The role of dislocation scattering in n -type GaN films von Ng, H. M., Doppalapudi, D., Moustakas, T. D., Weimann, N. G., Eastman, L. F.

Volltext

Effect of nitrogen on the growth of diamond films von Jin, S., Moustakas, T. D.

Volltext

Structural characterization of non-polar (1 1 2 0) and semi-polar (1 1 2 6) GaN films grown on r-plane sapphire von Zhou, Lin, Chandrasekaran, R., Moustakas, T.D., Smith, David J.

Volltext

Investigation of the design parameters of AlN/GaN multiple quantum wells grown by molecular beam epitaxy for intersubband absorption von Friel, I., Driscoll, K., Kulenica, E., Dutta, M., Paiella, R., Moustakas, T.D.

Volltext

Metal contacts to gallium nitride von FORESI, J. S, MOUSTAKAS, T. D

Volltext

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy von Doppalapudi, D., Basu, S. N., Ludwig, K. F., Moustakas, T. D.

Volltext

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy von Ng, H. M., Moustakas, T. D., Chu, S. N. G.

Volltext

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates von LEI, T, LUDWIG, K. F, MOUSTAKAS, T. D

Volltext

Recent progress of efficient deep UV-LEDs by plasma-assisted molecular beam epitaxy von Liao, Yitao, Kao, Chen-kai, Thomidis, C., Moldawer, A., Woodward, J., Bhattarai, D., Moustakas, T. D.

Volltext

Growth of III-nitride quantum dots and their applications to blue-green LEDs von Moustakas, T. D., Xu, Tao, Thomidis, C., Nikiforov, A. Yu, Zhou, Lin, Smith, David J.

Volltext

Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon von LEI, T, MOUSTAKAS, T. D, GRAHAM, R. J, HE, Y, BERKOWITZ, S. J

Volltext

Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys von Brummer, Gordie, Nothern, Denis, Nikiforov, A. Yu, Moustakas, T. D.

Volltext