A new approach to modeling the substrate current of pre-stressed and post-stressed MOSFET's von Jiuun-Jer Yang, Chung, S.S.-S., Peng-Cheng Chou, Chia-Hsiang Chen, Mou-Shiung Lin

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Selective tungsten CVD on submicron contact hole von Yeh, Wen-Kuan, Chen, Mao-Chieh, Wang, Pei-Jan, Liu, Lu-Min, Lin, Mou-Shiung

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Investigation of a high quality and ultraviolet-light transparent plasma-enhanced chemical vapor deposition silicon nitride film for non-volatile memory application von Wang, Chin-Kun, Ying, Tser-Liang, Wei, Chih-Shih, Liu, Lu-Min, Cheng, Huang-Chung, Lin, Mou-Shiung

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The classical versus the quantum mechanical model of mobility degradation due to the gate field in MOSFET inversion layers von Lin, Mou-Shiung

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Enhanced Metalorganic Chemical Vapor Deposition Titanium Nitride Film Fabricated Using Tetrakis-Dimethylamino-Titanium for Barrier Metal Application in Sub-Half-Micron Technology von Wang, Chin-Kun, Liu, Lu-Min, Liao, Marvin, Lin, Huang-Chung Cheng

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Field inversion generated in the CMOS double-metal process due to PETEOS and SOG interactions von Hsu, Shun-Liang, Liu, Lu-Min, Fang, Chung-Hsin, Ying, Shu-Lan, Chen, Tien-Li, Lin, Mou-Shiung, Chang, Chun-Yen

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An efficient improvement for barrier effect of W-filled contact von YEH, W.-K, CHAN, K.-Y, CHANG, T.-C, TSAI, M.-H, CHEN, S.-H, CHEN, M.-C, LIN, M.-S

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Anomalous current-voltage characteristics and threshold voltage shift in implanted-polysilicon-gated complementary metal-oxide-semiconductor field-effect transistors with/without t... von Chen, Chii-Wen, Fang, Yean-Kuen, Lee, Gun-Yuan, Hsieh, Jang-Cheng, Liang, Mong-Song, Lin, Mou-Shiung, Yoo, Chue-San

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Quantitative study of charge-to-breakdown of thin gate oxide for a p+-poly-Si metal oxide semiconductor capacitor von WANG, L.-S, LIN, M.-S

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Wideband Modeling of Temperature and Substrate Effects in RF Inductors on Silicon for 3.1-10.6 GHz UWB System Applications von Yo-Sheng Lin, Hsiao-Bin Liang, Hung-Wei Chiu, Liu, K., Hsin-Hong Wu, Shey-Shi Lu, Mou-Shiung Lin

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Thermal stability of W-contacted junction diodes von YEH, W.-K, CHAN, K.-Y, CHANG, T.-C, CHEN, M.-C, LIN, M.-S

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A better understanding of the channel mobility of Si MOSFETs based on the physics of quantized subbands von Lin, M-S

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IVB-2 evidence of quantum mechanical behavior for MOSFET inversion carriers at room temperature von Lin, Mou-Shiung

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Deposition properties of selective tungsten chemical vapor deposition von Yeh, Wen-Kuan, Chen, Mao-Chieh, Wang, Pei-Jan, Liu, Lu-Min, Lin, Mou-Shiung

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An efficient preclean of aluminized silicon substrate for chemical vapor deposition of submicron tungsten plugs von Yeh, Wen‐Kuan, Tsai, Ming‐Hsing, Chen, Sheng‐ Hsiung, Chen, Mao‐Chieh, Wang, Pei‐Jan, Liu, Lu‐Min, Lin, Mou‐Shiung

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Measurements and modeling of the harmonic distortion in InGaAsP distributed feedback lasers von Lin, M.-S., Wang, S.-Y.J., Dutta, N.K.

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Logic drive based on standard commodity FPGA IC Chips using non-volatile memory cells von Lin, Mou-Shiung, Lee, Jin-Yuan

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Logic drive with brain-like elasticity and integrality based on standard commodity FPGA IC chips using non-volatile memory cells von Lin, Mou-Shiung, Lee, Jin-Yuan

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Logic drive based on standard commodity FPGA IC chips von Lin, Mou-Shiung, Lee, Jin-Yuan

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LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS COMPRISING NON-VOLATILE RANDOM ACCESS MEMORY CELLS von Lin, Mou-Shiung, Lee, Jin-Yuan

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