MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor von Seryogin, George, Alema, Fikadu, Valente, Nicholas, Fu, Houqiang, Steinbrunner, Erich, Neal, Adam T., Mou, Shin, Fine, Aaron, Osinsky, Andrei

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Donors and deep acceptors in β-Ga2O3 von Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.

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Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition von Rafique, Subrina, Han, Lu, Neal, Adam T., Mou, Shin, Tadjer, Marko J., French, Roger H., Zhao, Hongping

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Toward high voltage radio frequency devices in β-Ga2O3 von Moser, Neil, Liddy, Kyle, Islam, Ahmad, Miller, Nicholas, Leedy, Kevin, Asel, Thaddeus, Mou, Shin, Green, Andrew, Chabak, Kelson

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Modeling interface roughness scattering with incorporation of potential energy and wave-function fluctuations: Enhancing mobility in AlN/GaN digital alloys von Hong, Gongyi, Chaney, Alexander, Charnas, Adam, Kim, Yunjo, Asel, Thaddeus J., Neal, Adam T., Mou, Shin

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β-Gallium oxide power electronics von Green, Andrew J., Speck, James, Xing, Grace, Moens, Peter, Allerstam, Fredrik, Gumaelius, Krister, Neyer, Thomas, Arias-Purdue, Andrea, Mehrotra, Vivek, Kuramata, Akito, Sasaki, Kohei, Watanabe, Shinya, Koshi, Kimiyoshi, Blevins, John, Bierwagen, Oliver, Krishnamoorthy, Sriram, Leedy, Kevin, Arehart, Aaron R., Neal, Adam T., Mou, Shin, Ringel, Steven A., Kumar, Avinash, Sharma, Ankit, Ghosh, Krishnendu, Singisetti, Uttam, Li, Wenshen, Chabak, Kelson, Liddy, Kyle, Islam, Ahmad, Rajan, Siddharth, Graham, Samuel, Choi, Sukwon, Cheng, Zhe, Higashiwaki, Masataka

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Single Defect Light-Emitting Diode in a van der Waals Heterostructure von Clark, Genevieve, Schaibley, John R, Ross, Jason, Taniguchi, Takashi, Watanabe, Kenji, Hendrickson, Joshua R, Mou, Shin, Yao, Wang, Xu, Xiaodong

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Facile Atmospheric Pressure Synthesis of High Thermal Stability and Narrow-Band Red-Emitting SrLiAl3N4:Eu2+ Phosphor for High Color Rendering Index White Light-Emitting Diodes von Zhang, Xuejie, Tsai, Yi-Ting, Wu, Shin-Mou, Lin, Yin-Chih, Lee, Jyh-Fu, Sheu, Hwo-Shuenn, Cheng, Bing-Ming, Liu, Ru-Shi

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Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor von Wen, Zhuoqun, Zhai, Xin, Lee, Cindy, Kosanovic, Stefan, Kim, Yunjo, Neal, Adam T., Asel, Thaddeus, Mou, Shin, Ahmadi, Elaheh

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Si doping in MOCVD grown (010) β-(AlxGa1−x)2O3 thin films von Bhuiyan, A. F. M. Anhar Uddin, Feng, Zixuan, Meng, Lingyu, Fiedler, Andreas, Huang, Hsien-Lien, Neal, Adam T., Steinbrunner, Erich, Mou, Shin, Hwang, Jinwoo, Rajan, Siddharth, Zhao, Hongping

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Facile Atmospheric Pressure Synthesis of High Thermal Stability and Narrow-Band Red-Emitting SrLiAl3N4:Eu(2+) Phosphor for High Color Rendering Index White Light-Emitting Diodes von Zhang, Xuejie, Tsai, Yi-Ting, Wu, Shin-Mou, Lin, Yin-Chih, Lee, Jyh-Fu, Sheu, Hwo-Shuenn, Cheng, Bing-Ming, Liu, Ru-Shi

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Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas von Neal, Adam T., Zhang, Yuewei, Elhamri, Said, Rajan, Siddharth, Mou, Shin

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γ-phase inclusions as common structural defects in alloyed β-(AlxGa1−x)2O3 and doped β-Ga2O3 films von Chang, Celesta S., Tanen, Nicholas, Protasenko, Vladimir, Asel, Thaddeus J., Mou, Shin, Xing, Huili Grace, Jena, Debdeep, Muller, David A.

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Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy von Vogt, Patrick, Hensling, Felix V. E., Azizie, Kathy, Chang, Celesta S., Turner, David, Park, Jisung, McCandless, Jonathan P., Paik, Hanjong, Bocklund, Brandon J., Hoffman, Georg, Bierwagen, Oliver, Jena, Debdeep, Xing, Huili G., Mou, Shin, Muller, David A., Shang, Shun-Li, Liu, Zi-Kui, Schlom, Darrell G.

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Shubnikov–de Haas Effect in InGaSb/InAs superlattices von Mitchel, W. C., Elhamri, Said, Haugan, H. J., Brown, Gail J., Mou, Shin, Szmulowicz, Frank

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Quantum Efficiency Analysis of InAs-GaSb Type-II Superlattice Photodiodes von Shin Mou, Li, J.V., Shun Lien Chuang

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Multicarrier transport in InGaSb/InAs superlattice structures von Mitchel, W. C., Elhamri, Said, Haugan, H. J., Brown, Gail J., Mou, Shin, Szmulowicz, Frank

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Epitaxial growth of α-(AlxGa1−x)2O3 by suboxide molecular-beam epitaxy at 1 µm/h von Steele, Jacob, Azizie, Kathy, Pieczulewski, Naomi, Kim, Yunjo, Mou, Shin, Asel, Thaddeus J., Neal, Adam T., Jena, Debdeep, Xing, Huili G., Muller, David A., Onuma, Takeyoshi, Schlom, Darrell G.

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Ge-Doped -Ga2O3 MOSFETs von Moser, Neil, McCandless, Jonathan, Crespo, Antonio, Leedy, Kevin, Green, Andrew, Neal, Adam, Shin Mou, Ahmadi, Elaheh, Speck, James, Chabak, Kelson, Peixoto, Nathalia, Jessen, Gregg

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Redox-Active π‑Conjugated Organometallic Monolayers: Pronounced Coulomb Blockade Characteristic at Room Temperature von Chen, Chiao-Pei, Luo, Wan-Rou, Chen, Chen-Ni, Wu, Shin-Mou, Hsieh, Shuchen, Chiang, Chao-Ming, Dong, Teng-Yuan

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