High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization von Sadoh, Taizoh, Kai, Yuki, Matsumura, Ryo, Moto, Kenta, Miyao, Masanobu

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Improving carrier mobility of polycrystalline Ge by Sn doping von Moto, Kenta, Yoshimine, Ryota, Suemasu, Takashi, Toko, Kaoru

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Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors von Moto, Kenta, Yamamoto, Keisuke, Imajo, Toshifumi, Suemasu, Takashi, Nakashima, Hiroshi, Toko, Kaoru

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Rectifying Schottky Contact in ZrN/Polycrystalline p-Ge von Moto, Kenta, Toko, Kaoru, Takayama, Tomonari, Imajo, Toshifumi, Ishiyama, Takamitsu, Yamamoto, Keisuke

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Advanced solid-phase crystallization for high-hole mobility (450 cm2 V−1 s−1) Ge thin film on insulator von Yoshimine, Ryota, Moto, Kenta, Suemasu, Takashi, Toko, Kaoru

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Pulse number controlled laser annealing for GeSn on insulator structure with high substitutional Sn concentration von Moto, Kenta, Matsumura, Ryo, Sadoh, Taizoh, Ikenoue, Hiroshi, Miyao, Masanobu

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Solid‐Phase Crystallization of GeSn Thin Films on GeO2‐Coated Glass von Mizoguchi, Takuto, Ishiyama, Takamitsu, Moto, Kenta, Imajo, Toshifumi, Suemasu, Takashi, Toko, Kaoru

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Solid‐Phase Crystallization of GeSn Thin Films on GeO2‐Coated Glass von Mizoguchi, Takuto, Ishiyama, Takamitsu, Moto, Kenta, Imajo, Toshifumi, Suemasu, Takashi, Toko, Kaoru

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High hole mobility (≥500 cm2 V−1 s−1) polycrystalline Ge films on GeO2-coated glass and plastic substrates von Imajo, Toshifumi, Moto, Kenta, Yoshimine, Ryota, Suemasu, Takashi, Toko, Kaoru

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Underlayer Selection to Improve the Performance of Polycrystalline Ge Thin Film Transistors von Imajo, Toshifumi, Moto, Kenta, Yamamoto, Keisuke, Suemasu, Takashi, Nakashima, Hiroshi, Toko, Kaoru

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Low-temperature (<200 oC) solid-phase crystallization of high substitutional Sn concentration ( ∼ 10%) GeSn on insulator enhanced by weak laser irradiation von Moto, Kenta, Sugino, Takayuki, Matsumura, Ryo, Ikenoue, Hiroshi, Miyao, Masanobu, Sadoh, Taizoh

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Au induced low-temperature formation of preferentially (111)-oriented crystalline Ge on insulator von Okamoto, Hayato, Kudo, Kohei, Nomitsu, Tatsushi, Mochii, Ryosuke, Moto, Kenta, Takakura, Kenichiro, Tsunoda, Isao

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Enhancement of Au-induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 von Moto, Kenta, Sakiyama, Shin, Okamoto, Hayato, Hara, Hideyuki, Nishimura, Hiroto, Takakura, Kenichiro, Tsunoda, Isao

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Enhanced Au induced lateral crystallization in electron-irradiated amorphous Ge on SiO2 von Sakiyama, Shin, Kaneko, Takahiro, Ootsubo, Takanobu, Sakai, Takatsugu, Nakashima, Kazutoshi, Moto, Kenta, Yoneoka, Masashi, Takakura, Kenichiro, Tsunoda, Isao

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High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization von Toko, Kaoru, Yoshimine, Ryota, Moto, Kenta, Suemasu, Takashi

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High hole mobility (≥500 cm 2 V −1 s −1 ) polycrystalline Ge films on GeO 2 -coated glass and plastic substrates von Imajo, Toshifumi, Moto, Kenta, Yoshimine, Ryota, Suemasu, Takashi, Toko, Kaoru

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Solid‐Phase Crystallization of GeSn Thin Films on GeO 2 ‐Coated Glass von Mizoguchi, Takuto, Ishiyama, Takamitsu, Moto, Kenta, Imajo, Toshifumi, Suemasu, Takashi, Toko, Kaoru

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Solid‐Phase Crystallization of GeSn Thin Films on GeO 2 ‐Coated Glass von Mizoguchi, Takuto, Ishiyama, Takamitsu, Moto, Kenta, Imajo, Toshifumi, Suemasu, Takashi, Toko, Kaoru

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Low-temperature process design for inversion mode n-channel thin-film-transistor on polycrystalline Ge formed by solid-phase crystallization von Huang, Linyu, Moto, Kenta, Igura, Kota, Ishiyama, Takamitsu, Toko, Kaoru, Wang, Dong, Yamamoto, Keisuke

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Improved carrier mobility of Sn-doped Ge thin films (≤20 nm) on insulator by interface-modulated solid-phase crystallization combined with surface passivation von Nagano, Takaya, Hara, Ryutaro, Moto, Kenta, Yamamoto, Keisuke, Sadoh, Taizoh

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