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  1. 1
    P-type Doping of Silicon Suitable for Structures with High Aspect Ratios by Using a Dopant Source of Boron Oxide Grown by Atomic Layer Deposition

    P-type Doping of Silicon Suitable for Structures with High Aspect Ratios by Using a Dopant Source of Boron Oxide Grown by Atomic Layer Deposition von Kalkofen, Bodo, Mothukuru, Venu Madhav, Lisker, Marco, Burte, Edmund P.


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  2. 2
    Investigation of Antimony Oxide Films Deposited by Atomic Layer Deposition

    Investigation of Antimony Oxide Films Deposited by Atomic Layer Deposition von Kalkofen, Bodo, Mothukuru, Venu Madhav, Klingsporn, Max, Burte, Edmund P.


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  3. 3
    P-type Doping of Silicon Suitable for Structures with High Aspect Ratios by Using a Dopant Source of Boron Oxide Grown by Atomic Layer Deposition

    P-type Doping of Silicon Suitable for Structures with High Aspect Ratios by Using a Dopant Source of Boron Oxide Grown by Atomic Layer Deposition von Kalkofen, Bodo, Mothukuru, Venu Madhav, Lisker, Marco, Burte, Edmund P.


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  4. 4
    Investigation of Antimony Oxide Films Deposited by Atomic Layer Deposition

    Investigation of Antimony Oxide Films Deposited by Atomic Layer Deposition von Kalkofen, Bodo, Mothukuru, Venu Madhav, Klingsporn, Max, Burte, Edmund


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