Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition von Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge von Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

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Lateral β-Ga2O3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band von Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

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Theoretical Power Figure-of-Merit in β -Ga2O3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation von Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals von Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

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Scaled T-Gate β-Ga2O3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit von Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

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Self-Heating Characterization of \beta -Ga2O3 Thin-Channel MOSFETs by Pulsed - and Raman Nanothermography von Blumenschein, Nicholas A., Moule, Taylor, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W., Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F., Chabak, Kelson D., Moser, Neil A., Jessen, Gregg H., Heller, Eric R., Miller, Nicholas C., Green, Andrew J., Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs von Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.

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Effective Suppression of IV Knee Walk-Out in AlGaN/GaN HEMTs for Pulsed-IV Pulsed-RF With a Large Signal Network Analyzer von Seok Joo Doo, Roblin, P., Jessen, G.H., Fitch, R.C., Gillespie, J.K., Moser, N.A., Crespo, A., Simpson, G., Jon King

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Theoretical Power Figure-of-Merit in β -Ga 2 O 3 Lateral Power Transistors Determined Using Physics-Based TCAD Simulation von Ahmed, Shaikh S., Islam, Ahmad E., Dryden, Daniel M., Liddy, Kyle J., Hendricks, Nolan S., Moser, Neil A., Chabak, Kelson D., Green, Andrew J.

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Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates von Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.

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Defect Engineering at the Al 2 O 3 /(010) β -Ga 2 O 3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals von Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

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Scaled T-Gate β -Ga 2 O 3 MESFETs With 2.45 kV Breakdown and High Switching Figure of Merit von Dryden, Daniel M., Liddy, Kyle J., Islam, Ahmad E., Williams, Jeremiah C., Walker, Dennis E., Hendricks, Nolan S., Moser, Neil A., Arias-Purdue, Andrea, Sepelak, Nicholas P., DeLello, Kursti, Chabak, Kelson D., Green, Andrew J.

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Self-Heating Characterization of [Formula Omitted]-Ga2O3 Thin-Channel MOSFETs by Pulsed [Formula Omitted]–[Formula Omitted] and Raman Nanothermography von Blumenschein, Nicholas A, Taylor Moule, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W, Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F, Chabak, Kelson D, Moser, Neil A, Jessen, Gregg H, Heller, Eric R, Miller, Nicholas C, Green, Andrew J, Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

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Self-Heating Characterization of $\beta$ -Ga 2 O 3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography von Blumenschein, Nicholas A., Moule, Taylor, Dalcanale, Stefano, Mercado, Elisha, Singh, Manikant, Pomeroy, James W., Kuball, Martin, Wagner, Gunter, Paskova, Tania, Muth, John F., Chabak, Kelson D., Moser, Neil A., Jessen, Gregg H., Heller, Eric R., Miller, Nicholas C., Green, Andrew J., Popp, Andreas, Crespo, Antonio, Leedy, Kevin, Lindquist, Miles

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Lateral β-Ga 2 O 3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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Thin channel β-Ga 2 O 3 MOSFETs with self-aligned refractory metal gates von Liddy, Kyle J., Green, Andrew J., Hendricks, Nolan S., Heller, Eric R., Moser, Neil A., Leedy, Kevin D., Popp, Andreas, Lindquist, Miles T., Tetlak, Stephen E., Wagner, Günter, Chabak, Kelson D., Jessen, Gregg H.

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Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications von Moser,Neil A, Fitch,Robert C, Walker,Dennis E, Green,Andrew J, Chabak,Kelson D, Heller,Eric, McCandless,Jonathan P, Tetlak,Stephen E, Crespo,Antonio, Leedy,Kevin D, Jessen,Gregg H

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Loss of association between HbA1c and vascular disease in older adults with type 1 diabetes von Ji, HaEun, Godsland, Ian, Oliver, Nick S., Hill, Neil E.

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