Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 eV optical bandgap von TOPORKOV, M, AVRUTIN, V, OKUR, S, IZYUMSKAYA, N, DEMCHENKO, D, VOLK, J, SMITH, D. J, MORKOC, H, ÖZGÜR, Ü

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Surface plasmon enhanced UV emission in AlGaN/GaN quantum well von Lin, J., Mohammadizia, A., Neogi, A., Morkoc, H., Ohtsu, M.

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Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates von Killat, N., Montes, M., Pomeroy, J. W., Paskova, T., Evans, K. R., Leach, J., Li, X., Ozgur, U., Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

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Optimization of ( 1 1 2 ¯ 0 ) a-plane GaN growth by MOCVD on ( 1 1 ¯ 0 2 ) r-plane sapphire von Ni, X., Fu, Y., Moon, Y.T., Biyikli, N., Morkoç, H.

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Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels von Matulionis, A, Liberis, J, Šermukšnis, E, Xie, J, Leach, J H, Wu, M, Morkoç, H

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Emergence of high quality sputtered III-nitride semiconductors and devices von Izyumskaya, N, Avrutin, V, Ding, K, Özgür, Ü, Morkoç, H, Fujioka, H

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Thermal quenching of the yellow luminescence in GaN von Reshchikov, M. A., Albarakati, N. M., Monavarian, M., Avrutin, V., Morkoç, H.

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Ferromagnetism of ZnO and GaN: A Review von Liu, C, Yun, F, Morkoc, H

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Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes von Doğan, S., Duman, S., Gürbulak, B., Tüzemen, S., Morkoç, H.

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Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel von Gökden, S, Tülek, R, Teke, A, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E

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The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures von Teke, A, Gökden, S, Tülek, R, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E

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Emerging gallium nitride based devices von Mohammad, S.N., Salvador, A.A., Morkoc, H.

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Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures von Ding, K., Ullah, M. B., Avrutin, V., Özgür, Ü., Morkoç, H.

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Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors von Šimukovi, A, Matulionis, A, Liberis, J, Šermukšnis, E, Sakalas, P, Zhang, F, Leach, J H, Avrutin, V, Morkoç, H

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Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures von Leach, J. H., Wu, M., Ni, X., Li, X., Özgür, Ü., Morkoç, H.

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Preparation and properties of ZnO and devices von Izyumskaya, N., Avrutin, V., Özgür, Ü., Alivov, Y. I., Morkoç, H.

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A comprehensive review of ZnO materials and devices von Özgür, Ü., Alivov, Ya I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S.-J., Morkoç, H.

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Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates von Tapajna, M., Killat, N., Moereke, J., Paskova, T., Evans, K. R., Leach, J., Li, X., Ozgur, Ü, Morkoc, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

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On the quantum efficiency of InGaN light emitting diodes: Effects of active layer design, electron cooler, and electron blocking layer von Li, X., Zhang, F., Okur, S., Avrutin, V., Liu, S. J., Özgür, Ü., Morkoç, H., Hong, S. M., Yen, S. H., Hsu, T. S., Matulionis, A.

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Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs von Sacconi, F., Di Carlo, A., Lugli, P., Morkoc, H.

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