Emergence of high quality sputtered III-nitride semiconductors and devices von Izyumskaya, N, Avrutin, V, Ding, K, Özgür, Ü, Morkoç, H, Fujioka, H

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Thermal quenching of the yellow luminescence in GaN von Reshchikov, M. A., Albarakati, N. M., Monavarian, M., Avrutin, V., Morkoç, H.

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Ferromagnetism of ZnO and GaN: A Review von Liu, C, Yun, F, Morkoc, H

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Investigation of high density two-dimensional electron gas in Zn-polar BeMgZnO/ZnO heterostructures von Ding, K., Ullah, M. B., Avrutin, V., Özgür, Ü., Morkoç, H.

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A comprehensive review of ZnO materials and devices von Özgür, Ü., Alivov, Ya I., Liu, C., Teke, A., Reshchikov, M. A., Doğan, S., Avrutin, V., Cho, S.-J., Morkoç, H.

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Terahertz oscillations in gallium nitride quantum-well channels predicted by hot-electron noise temperature behavior at microwave frequency von Ramonas, M., Liberis, J., Šimukovič, A., Šermukšnis, E., Matulionis, A., Avrutin, V., Özgür, Ü., Morkoç, H.

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Properties of the main Mg-related acceptors in GaN from optical and structural studies von Monemar, B., Paskov, P. P., Pozina, G., Hemmingsson, C., Bergman, J. P., Khromov, S., Izyumskaya, V. N., Avrutin, V., Li, X., Morkoç, H., Amano, H., Iwaya, M., Akasaki, I.

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Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence von Reshchikov, M. A., McNamara, J. D., Toporkov, M., Avrutin, V., Morkoç, H., Usikov, A., Helava, H., Makarov, Yu

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Hot-electron energy relaxation time in Ga-doped ZnO films von Šermukšnis, E., Liberis, J., Ramonas, M., Matulionis, A., Toporkov, M., Liu, H. Y., Avrutin, V., Özgür, Ü., Morkoç, H.

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Comprehensive characterization of hydride VPE grown GaN layers and templates von MORKOC, H

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Lattice parameters and electronic structure of BeMgZnO quaternary solid solutions: Experiment and theory von Toporkov, M., Demchenko, D. O., Zolnai, Z., Volk, J., Avrutin, V., Morkoç, H., Özgür, Ü.

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Self-formation of high-field domain in epitaxial ZnO and its suppression in ZnO/MgZnO heterostructure von Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

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Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation von Ardaravičius, L., Kiprijanovič, O., Ramonas, M., Šermukšnis, E., Liberis, J., Šimukovič, A., Matulionis, A., Ullah, Md. B., Ding, K., Avrutin, V., Özgür, Ü., Morkoç, H.

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InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes von Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., Morkoç, H., Matulionis, A., Paskova, T., Mulholland, G., Evans, K. R.

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges von Killat, N., Montes Bajo, M., Paskova, T., Evans, K. R., Leach, J., Li, X., Özgür, Ü., Morkoç, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

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Growth kinetics of O-polar BexMgyZn1-x-yO alloy: Role of Zn to Be and Mg flux ratio as a guide to growth at high temperature von Ullah, M. B., Avrutin, V., Nakagawara, T., Hafiz, S., Altuntaş, I., Özgür, Ü., Morkoç, H.

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Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them von Ni, X., Li, X., Lee, J., Liu, S., Avrutin, V., Özgür, Ü., Morkoç, H., Matulionis, A.

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Subpicosecond time-resolved Raman studies of LO phonons in GaN: Dependence on photoexcited carrier density von Tsen, K. T., Kiang, Juliann G., Ferry, D. K., Morkoç, H.

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells von Rosales, D., Gil, B., Bretagnon, T., Guizal, B., Zhang, F., Okur, S., Monavarian, M., Izyumskaya, N., Avrutin, V., Özgür, Ü., Morkoç, H., Leach, J. H.

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Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN von Khromov, S., Monemar, B., Avrutin, V., Morkoç, H., Hultman, L., Pozina, G.

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