Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance von Takagi, S., Iisawa, T., Tezuka, T., Numata, T., Nakaharai, S., Hirashita, N., Moriyama, Y., Usuda, K., Toyoda, E., Dissanayake, S., Shichijo, M., Nakane, R., Sugahara, S., Takenaka, M., Sugiyama, N.

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Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique von Nakaharai, Shu, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Takagi, Shin-ichi

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Characterization of locally strained Ge1−xSnx/Ge fine structures by synchrotron X-ray microdiffraction von Ike Shinichi, Nakatsuka Osamu, Moriyama Yoshihiko, Kurosawa Masashi, Taoka Noriyuki, Imai Yasuhiko, Kimura Shigeru, Tezuka Tsutomu

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Decreased serum brain-derived neurotrophic factor in trained men von Nofuji, Yu, Suwa, Masataka, Moriyama, Yoshihiko, Nakano, Hiroshi, Ichimiya, Atsushi, Nishichi, Reiko, Sasaki, Haruka, Radak, Zsolt, Kumagai, Shuzo

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In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs von Moriyama, Yoshihiko, Kamimuta, Yuuichi, Kamata, Yoshiki, Ikeda, Keiji, Sakai, Akira, Tezuka, Tsutomu

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Formation and characterization of locally strained Ge1−Sn /Ge microstructures von Ike, Shinichi, Moriyama, Yoshihiko, Kurosawa, Masashi, Taoka, Noriyuki, Nakatsuka, Osamu, Imai, Yasuhiko, Kimura, Shigeru, Tezuka, Tsutomu, Zaima, Shigeaki

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Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge Condensation Process von Hirashita, Norio, Moriyama, Yoshihiko, Nakaharai, Shu, Irisawa, Toshifumi, Sugiyama, Naoharu, Takagi, Shin-ichi

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Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process von Tezuka, Tsutomu, Hirashita, Norio, Moriyama, Yoshihiko, Nakaharai, Shu, Sugiyama, Naoharu, Takagi, Shin-ichi

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Single Source Heterojunction Metal--Oxide--Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at L... von Mizuno, Tomohisa, Moriyama, Yoshihiko, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process von Hirashita, Norio, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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(Invited) Ge-on-Insulator MOSFETs for High-Performance and 3D-LSI Applications von Tezuka, Tsutomu, Ikeda, Keiji, Kamata, Yoshiki, Kamimuta, Yuuichi, Usuda, Koji, Moriyama, Yoshihiko, Ono, Mizuki, Koike, Masahiro, Oda, Minoru, Irisawa, Toshifumi, Mieda, Eiko, Maeda, Tatsuro, Jevasuwan, Wipakorn, Kurashima, Yuichi, Takagi, Hideki, Furuse, Kiyoe, Kurosawa, Etsuo

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(Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs von Ikeda, Keiji, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Ono, Mizuki, Usuda, Koji, Oda, Minoru, Irisawa, Toshifumi, Kosemura, Daisuke, Ogura, Atsushi, Tezuka, Tsutomu

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Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process von Tezuka, Tsutomu, Moriyama, Yoshihiko, Nakaharai, Shu, Sugiyama, Naoharu, Hirashita, Norio, Toyoda, Eiji, Miyamura, Yoshiji, Takagi, Shin-ichi

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Study of the surface cleaning of GOI and SGOI substrates for Ge epitaxial growth von Moriyama, Yoshihiko, Hirashita, Norio, Usuda, Koji, Nakaharai, Shu, Sugiyama, Naoharu, Toyoda, Eiji, Takagi, Shin-ichi

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Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation von Usuda, Koji, Mizuno, Tomohisa, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Nakaharai, Shu, Takagi, Shin-ichi

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Single Source Heterojunction Metal–Oxide–Semiconductor Transistors for Quasi-Ballistic Devices: Optimization of Source Heterostructures and Electron Velocity Characteristics at Low... von Mizuno, Tomohisa, Moriyama, Yoshihiko, Tezuka, Tsutomu, Sugiyama, Naoharu, Takagi, Shin-ichi

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First demonstration of threshold voltage control by sub-1V back-gate biasing for thin body and buried-oxide (TBB) Ge-on-insulator (GOI) MOSFETs for low-power operation von Ikeda, K., Moriyama, Y., Ono, M., Kamimuta, Y., Irisawa, T., Kamata, Y., Sakai, A., Tezuka, T.

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Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressors... von Moriyama, Yoshihiko, Kamimuta, Yuuichi, Ikeda, Keiji, Tezuka, Tsutomu

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Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS von Takagi, Shin-ichi, Mizuno, Tomohisa, Tezuka, Tsutomu, Sugiyama, Naoharu, Numata, Toshinori, Usuda, Koji, Moriyama, Yoshihiko, Nakaharai, Shu, Koga, Junji, Tanabe, Akihito, Maeda, Tatsuro

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Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers von Moriyama, Yoshihiko, Ikeda, Keiji, Takeuchi, Shotaro, Kamimuta, Yuuichi, Nakamura, Yoshiaki, Izunome, Koji, Sakai, Akira, Tezuka, Tsutomu

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