Simulation of Hall Field Elements Based on Nanosized Silicon-on-Insulator Heterostructures von Mordkovich, V. N., Abgaryan, K. K., Reviznikov, D. L., Leonov, A. V.

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Study of SOI Field-Effect Hall Sensors in the Partial Depletion Mode von Korolev, M. A., Mordkovich, V. N., Leonov, A. V., Devlikanova, S. S.

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Characterization of crystal structure features of a SIMOX substrate von Eidelman, K.B., Shcherbachev, K.D., Tabachkova, N.Yu, Podgornii, D.A., Mordkovich, V.N.

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Multichannel and Multifunctional Frequency-output Sensors of Physical Effects Based on a Universal Field Transistor-type Sensing Element with a Silicon-on-Insulator Structure von Leonov, A. V., Malykh, A. A., Mordkovich, V. N., Pavlyuk, M. I.

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A silicon field-effect hall sensor with an extended operating temperature range von Leonov, A. V., Malykh, A. A., Mordkovich, V. N., Pavlyuk, M. I.

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The influence of in situ photoexcitation on a defect structure generation in Ar+ implanted GaAs(001) crystals revealed by high-resolution x-ray diffraction and Rutherford backscatt... von Chtcherbatchev, K D, Bublik, V T, Markevich, A S, Mordkovich, V N, Alves, E, Barradas, N P, Sequeira, A D

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The effect of in situ photoexcitation on the generation of damaged structures during ion implantation into Si wafers von Shcherbachev, K D, Bublik, V T, Mordkovich, V N, Pazhin, D M

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Radiation-induced structural transformations in a silicon layer of SOI von Shcherbachev, K. D., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M., Alves, E., Barradas, N. P.

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Influence of neutron irradiation on the parameters of field Hall plates von Makoveev, V.K., Filatov, M.M., Goncharov, V.P., Karpukhin, A.V., Lachinov, V.M., Leonov, A.V., Mordkovich, V.N.

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p-n junction on high-pressure-high-temperature grown single crystal diamond: UV-emission spectra and electrical properties von Buga, S G, Blank, V D, Bormashov, V S, Denisov, V N, Terentiev, S A, Kirichenko, A N, Kuznetsov, M S, Mordkovich, V N, Nosukhin, S A

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The effect of low-field injection of charge carriers on the electrical properties of the metal-oxide-semiconductor structures von Mordkovich, V. N., Mokrushin, A. D., Omel’yanovskaya, N. M.

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Field Controlled Si Hall Element with Extended Operation Temperature Range from Liquid Helium Temperature up to 650K von Leonov, A.V., Malykh, A.A., Mordkovich, V.N., Pavlyuk, M.I.

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A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C von Leonov, A. V., Malykh, A. A., Mordkovich, V. N., Pavlyuk, M. I.

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An autogenerator induction-to-frequency converter circuit based on a field-effect Hall sensor with a regulated frequency von Leonov, A. V., Malykh, A. A., Mordkovich, V. N., Pavlyuk, M. I.

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Mechanisms of phase transitions in ion-doped silicon layers von DANILIN, A. B, MORDKOVICH, V. N

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Precipitation, epitaxy and nucleation in nickel implanted a-Si von Kuznetsov, A.Yu, Khodos, I.I., Mordkovich, V.N., Vyatkin, A.F.

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Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures von Shcherbachev, K. D., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M.

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The features of magnetosensitive sensors based on a field-effect hall probe von Baranochnikov, M. L., Leonov, A. V., Mordkovich, V. N., Pazhin, D. M.

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Influence of the chemical nature of implanted ions on the structure of a silicon layer damaged by implantation von Shcherbachev, K. D., Voronova, M. I., Bublik, V. T., Mordkovich, V. N., Pazhin, D. M., Zinenko, V. I., Agafonov, Yu. A.

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Polyenergy ion beam synthesis of buried oxynitride layer in silicon von Barabanenkov, M.Yu, Agafonov, Yu.A., Mordkovich, V.N., Pustovit, A.N., Vyatkin, A.F., Zinenko, V.I.

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