Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study von Russell Stephen A O, Cao, Liang, Qi Dongchen, Tallaire Alexandre, Crawford, Kevin G, Wee, Andrew T, Moran David A J

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Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor von Macdonald, David A., Crawford, Kevin G., Tallaire, Alexandre, Issaoui, Riadh, Moran, David A. J.

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50-nm Self-Aligned and "Standard" T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node von Moran, David A. J., McLelland, Helen, Elgaid, Khaled, Whyte, Griogair, Stanley, Colin R., Thayne, Iain

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Selective phase growth and precise-layer control in MoTe2 von Fraser, James P., Masaityte, Liudvika, Zhang, Jingyi, Laing, Stacey, Moreno-López, Juan Carlos, McKenzie, Adam F., McGlynn, Jessica C., Panchal, Vishal, Graham, Duncan, Kazakova, Olga, Pichler, Thomas, MacLaren, Donald A., Moran, David A. J., Ganin, Alexey Y.

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Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions von Moran, D A J, Fox, O J L, McLelland, H, Russell, S, May, P W

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Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability von Crawford, Kevin G., Cao, Liang, Qi, Dongchen, Tallaire, Alexandre, Limiti, E., Verona, C., Wee, Andrew T. S., Moran, David A. J.

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Increased efficiency of direct nanoimprinting on planar and curved bulk titanium through surface modification von Greer, Andrew I.M., Seunarine, Krishna, Khokhar, Ali Z., MacLaren, Ian, Brydone, Alistair S., Moran, David A.J., Gadegaard, Nikolaj

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Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides von Crawford, Kevin G., Qi, Dongchen, McGlynn, Jessica, Ivanov, Tony G., Shah, Pankaj B., Weil, James, Tallaire, Alexandre, Ganin, Alexey Y., Moran, David A. J.

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Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz von Russell, S. A. O., Sharabi, S., Tallaire, A., Moran, D. A. J.

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High resolution structural characterisation of laser-induced defect clusters inside diamond von Salter, Patrick S., Booth, Martin J., Courvoisier, Arnaud, Moran, David A. J., MacLaren, Donald A.

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Assessing Challenges of 2D-Molybdenum Ditelluride for Efficient Hydrogen Generation in a Full-Scale Proton Exchange Membrane (PEM) Water Electrolyzer von Kumar Samuel, Arun, Faqeeh, Abdulhai H., Li, Weihao, Ertekin, Zeliha, Wang, Yuanshen, Zhang, Jingyi, Gadegaard, Nikolaj, Moran, David A. J., Symes, Mark D., Ganin, Alexey Y.

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The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond von Crawford, Kevin G., Tallaire, Alexandre, Li, Xu, Macdonald, David A., Qi, Dongchen, Moran, David A.J.

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Dual barrier InAlN/AlGaN/GaN‐on‐silicon high‐electron‐mobility transistors with Pt‐ and Ni‐based gate stacks von Floros, Konstantinos, Li, Xu, Guiney, Ivor, Cho, Sung‐Jin, Hemakumara, Dilini, Wallis, David J., Wasige, Edward, Moran, David A. J., Humphreys, Colin J., Thayne, Iain G.

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Surface transfer doping of diamond: A review von Crawford, Kevin G., Maini, Isha, Macdonald, David A., Moran, David A.J.

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RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study von Russell, Stephen, Sharabi, Salah, Tallaire, Alexandre, Moran, David A. J.

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High synergy atomic layer etching of AlGaN/GaN with HBr and Ar von Crawford, Kevin G., Grant, James, Hemakumara, Dilini Tania, Li, Xu, Thayne, Iain, Moran, David A. J.

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Comments on "High Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm" von Thayne, Iain G., Hill, Richard J. W., Moran, David A. J., Kalna, Karol, Asenov, Asen, Passlack, Matthias

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Performance Enhancement of Al 2 O 3 /H-Diamond MOSFETs Utilizing Vacuum Annealing and V 2 O 5 as a Surface Electron Acceptor von Macdonald, David A., Crawford, Kevin G., Tallaire, Alexandre, Issaoui, Riadh, Moran, David A. J.

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Monte carlo simulations of high-performance implant free In0.3Ga0.7As Nano-MOSFETs for low-power CMOS applications von KALNA, Karol, WILSON, James A, MORAN, David A. J, HILL, Richard J. W, LONG, Andrew R, DROOPAD, Ravi, PASSLACK, Matthias, THAYNE, Iain G, ASENOV, Asen

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Elucidating Catalytic Sites Governing the Performance toward the Hydrogen Evolution Reaction in Ternary Nitride Electrocatalysts von Sun, Youyi, Sviridova, Elizaveta, Kamp, Marius, Zhang, Jingyi, Kienle, Lorenz, Moran, David A. J., Guselnikova, Olga, Ganin, Alexey Y.

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