The effect of oxygen incorporation in sputtered scandium nitride films von Moram, M.A., Barber, Z.H., Humphreys, C.J.

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Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire von Johnston, C.F., Kappers, M.J., Moram, M.A., Hollander, J.L., Humphreys, C.J.

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Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers von Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.

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Defect reduction processes in heteroepitaxial non-polar a-plane GaN films von Hao, Rui, Kappers, M.J., Moram, M.A., Humphreys, C.J.

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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer von Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.

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ScGaN and ScAlN: emerging nitride materials von Moram, M. A., Zhang, S.

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Growth of epitaxial thin films of scandium nitride on 100-oriented silicon von Moram, M.A., Novikov, S.V., Kent, A.J., Nörenberg, C., Foxon, C.T., Humphreys, C.J.

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Growth of low dislocation density GaN using transition metal nitride masking layers von Moram, M.A., Kappers, M.J., Barber, Z.H., Humphreys, C.J.

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Microstructure of epitaxial scandium nitride films grown on silicon von Moram, M.A., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.

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Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy von Hall, J.L., Moram, M.A., Sanchez, A., Novikov, S.V., Kent, A.J., Foxon, C.T., Humphreys, C.J., Campion, R.P.

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Elastic constants of the II–IV nitride semiconductors MgSiN 2 , MgGeN 2 and MgSnN 2 von Råsander, M, Moram, M A

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The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies von Moram, M.A., Gabbai, U.E., Sadler, T.C., Kappers, M.J., Oliver, R.A.

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Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems von Simons, R., Gabbai, U.E., Moram, M.A.

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Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire von Kappers, M.J., Moram, M.A., Sridhara Rao, D.V., McAleese, C., Humphreys, C.J.

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The effects of annealing on non-polar (1 1 2¯ 0) a-plane GaN films von Hao, Rui, Zhu, T., Häberlen, M., Chang, T.Y., Kappers, M.J., Oliver, R.A., Humphreys, C.J., Moram, M.A.

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Investigating stacking faults in nonpolar gallium nitride films using X-ray diffraction von Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.

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Surface structures of scandium silicides grown on Si(1 1 1) studied by STM, AFM and electron diffraction von Nörenberg, C., Moram, M.A., Dobson, P.J.

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Interlayer methods for reducing the dislocation density in gallium nitride von Kappers, M.J., Moram, M.A., Zhang, Y., Vickers, M.E., Barber, Z.H., Humphreys, C.J.

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Valence band offsets of ScxGa1-xN/AlN and ScxGa1-xN/GaN heterojunctions von Tsui, H.C.L, Goff, L.E, Palgrave, R.G, Beere, H.E, Farrer, I, Ritchie, D.A, Moram, M.A

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The effect of metal-rich growth conditions on the microstructure of ScxGa1-xN films grown using molecular beam epitaxy von Tsui, H.C.L, Goff, L.E, Barradas, N.P, Alves, E, Pereira, S, Beere, H.E, Farrer, I, Nicoll, C.A, Ritchie, D.A, Moram, M.A

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