ScGaN and ScAlN: emerging nitride materials von Moram, M. A., Zhang, S.

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Elastic constants and critical thicknesses of ScGaN and ScAlN von Zhang, S., Fu, W. Y., Holec, D., Humphreys, C. J., Moram, M. A.

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Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems von Simons, R., Gabbai, U.E., Moram, M.A.

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Mg doping affects dislocation core structures in GaN von Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A

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X-ray diffraction of III-nitrides von Moram, M A, Vickers, M E

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On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors von Råsander, M, Moram, M A

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Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers von Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.

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Elastic constants of the II-IV nitride semiconductors MgSiN2, MgGeN2 and MgSnN2 von Råsander, M, Moram, M A

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Measuring dislocation densities in nonpolar a-plane GaN films using atomic force microscopy von Moram, M A, Johnston, C F, Kappers, M J, Humphreys, C J

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The effects of film surface roughness on x-ray diffraction of nonpolar gallium nitride films von Moram, M A, Johnston, C F, Kappers, M J, Humphreys, C J

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Low dislocation density GaN growth on high-temperature AlN buffer layers on (0 0 0 1) sapphire von Kappers, M.J., Moram, M.A., Sridhara Rao, D.V., McAleese, C., Humphreys, C.J.

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Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer von Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.

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On the thermal expansion in MgSiN2 von Råsander, M, Moram, M A

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Defect reduction processes in heteroepitaxial non-polar a-plane GaN films von Hao, Rui, Kappers, M.J., Moram, M.A., Humphreys, C.J.

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Growth of epitaxial thin films of scandium nitride on 100-oriented silicon von Moram, M.A., Novikov, S.V., Kent, A.J., Nörenberg, C., Foxon, C.T., Humphreys, C.J.

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Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2 von Råsander, M., Quirk, J. B., Wang, T., Mathew, S., Davies, R., Palgrave, R. G., Moram, M. A.

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Understanding x-ray diffraction of nonpolar gallium nitride films von Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., Humphreys, C. J.

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Growth of low dislocation density GaN using transition metal nitride masking layers von Moram, M.A., Kappers, M.J., Barber, Z.H., Humphreys, C.J.

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Microstructure of epitaxial scandium nitride films grown on silicon von Moram, M.A., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.

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The effects of Si doping on dislocation movement and tensile stress in GaN films von Moram, M. A., Kappers, M. J., Massabuau, F., Oliver, R. A., Humphreys, C. J.

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