X-ray diffraction of III-nitrides von Moram, M A, Vickers, M E

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Long-term visit-to-visit glycemic variability as predictor of micro- and macrovascular complications in patients with type 2 diabetes: The Rio de Janeiro Type 2 Diabetes Cohort Stu... von Cardoso, C R L, Leite, N C, Moram, C B M, Salles, G F

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ScGaN and ScAlN: emerging nitride materials von Moram, M. A., Zhang, S.

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On the accuracy of commonly used density functional approximations in determining the elastic constants of insulators and semiconductors von Råsander, M, Moram, M A

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Elastic constants and critical thicknesses of ScGaN and ScAlN von Zhang, S., Fu, W. Y., Holec, D., Humphreys, C. J., Moram, M. A.

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Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems von Simons, R., Gabbai, U.E., Moram, M.A.

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Elastic constants of the II-IV nitride semiconductors MgSiN2, MgGeN2 and MgSnN2 von Råsander, M, Moram, M A

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On the thermal expansion in MgSiN2 von Råsander, M, Moram, M A

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Mg doping affects dislocation core structures in GaN von Rhode, S K, Horton, M K, Kappers, M J, Zhang, S, Humphreys, C J, Dusane, R O, Sahonta, S -L, Moram, M A

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Treatment Adherence and Its Associated Factors in Patients with Type 2 Diabetes: Results from the Rio de Janeiro Type 2 Diabetes Cohort Study von Salles, Gil F., Leite, Nathalie C., Rodrigues, Priscila C., Moram, Camila B. M., Marinho, Fernanda S., Cardoso, Claudia

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Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2 von Råsander, M., Quirk, J. B., Wang, T., Mathew, S., Davies, R., Palgrave, R. G., Moram, M. A.

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Band gap and electronic structure of MgSiN2 von Quirk, J. B., Råsander, M., McGilvery, C. M., Palgrave, R., Moram, M. A.

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Optical and structural properties of dislocations in InGaN von Massabuau, F. C.-P., Horton, M. K., Pearce, E., Hammersley, S., Chen, P., Zielinski, M. S., Weatherley, T. F. K., Divitini, G., Edwards, P. R., Kappers, M. J., McAleese, C., Moram, M. A., Humphreys, C. J., Dawson, P., Oliver, R. A.

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The effect of oxygen incorporation in sputtered scandium nitride films von Moram, M.A., Barber, Z.H., Humphreys, C.J.

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Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers von Moram, M.A., Johnston, C.F., Kappers, M.J., Humphreys, C.J.

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Electronic structure of the high and low pressure polymorphs of MgSiN2 von Råsander, M, Moram, M A

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Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire von Johnston, C.F., Kappers, M.J., Moram, M.A., Hollander, J.L., Humphreys, C.J.

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Understanding x-ray diffraction of nonpolar gallium nitride films von Moram, M. A., Johnston, C. F., Hollander, J. L., Kappers, M. J., Humphreys, C. J.

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Defect reduction processes in heteroepitaxial non-polar a-plane GaN films von Hao, Rui, Kappers, M.J., Moram, M.A., Humphreys, C.J.

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Band gaps of wurtzite ScxGa1−xN alloys von Tsui H C L, Rhode, S K, Pereira, S, Beere, H E, Farrer, I, Nicoll, C A, Ritchie, D A, Moram, M A

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