Deep donor levels (DX centers) in III-V semiconductors von MOONEY, P. M

Volltext

Strain relaxation and dislocations in SiGe/Si structures von Mooney, P.M.

Volltext

Dislocation-free strained silicon-on-silicon by in-place bonding von Cohen, G. M., Mooney, P. M., Paruchuri, V. K., Hovel, H. J.

Volltext

Elastic strain relaxation in free-standing SiGe/Si structures von Mooney, P. M., Cohen, G. M., Chu, J. O., Murray, C. E.

Volltext

Electron and hole mobility enhancement in strained SOI by wafer bonding von Lijuan Huang, Chu, J.O., Goma, S.A., D'Emic, C.P., Koester, S.J., Canaperi, D.F., Mooney, P.M., Cordes, S.A., Speidell, J.L., Anderson, R.M., Wong, H.-S.P.

Volltext

Strain relaxation and threading dislocation density in helium-implanted and annealed Si1−xGex/Si(100) heterostructures von Cai, J., Mooney, P. M., Christiansen, S. H., Chen, H., Chu, J. O., Ott, J. A.

Volltext

Coulomb blockade in a silicon/silicon–germanium two-dimensional electron gas quantum dot von Klein, L. J., Slinker, K. A., Truitt, J. L., Goswami, S., Lewis, K. L. M., Coppersmith, S. N., van der Weide, D. W., Friesen, Mark, Blick, R. H., Savage, D. E., Lagally, M. G., Tahan, Charlie, Joynt, Robert, Eriksson, M. A., Chu, J. O., Ott, J. A., Mooney, P. M.

Volltext

Comparison of large-scale layer-relaxation simulations with experiment von Schwarz, K. W., Cai, J., Mooney, P. M.

Volltext

Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy von Koester, S. J., Rim, K., Chu, J. O., Mooney, P. M., Ott, J. A., Hargrove, M. A.

Volltext

Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures von Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS

Volltext

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers von Aubertine, D. B., Mander, M. A., Ozguven, N., Marshall, A. F., McIntyre, P. C., Chu, J. O., Mooney, P. M.

Volltext

Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas von Klein, L. J., Lewis, K. L. M., Slinker, K. A., Goswami, Srijit, van der Weide, D. W., Blick, R. H., Mooney, P. M., Chu, J. O., Coppersmith, S. N., Friesen, Mark, Eriksson, M. A.

Volltext

Mapping of strain fields about thin film structures using x-ray microdiffraction von Murray, C. E., Noyan, I. C., Mooney, P. M., Lai, B., Cai, Z.

Volltext

Raman scattering analysis of relaxed GexSi1-x alloy layers von MOONEY, P. M, DACOL, F. H, TSANG, J. C, CHU, J. O

Volltext

Applications of synchrotron X-rays in microelectronics industry research von Jordan-Sweet, Jean L., Detavernier, Christophe, Lavoie, Christian, Mooney, Patricia M., Toney, Michael F.

Volltext

Characterization of the silicon on insulator film in bonded wafers by high resolution x-ray diffraction von Cohen, G. M., Mooney, P. M., Jones, E. C., Chan, K. K., Solomon, P. M., Wong, H-S. P.

Volltext

N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers von Mooney, P.M., Rim, K., Christiansen, S.H., Chan, K.K., Chu, J.O., Cai, J., Chen, H., Jordan-Sweet, J.L., Yang, Y.Y., Boyd, D.C.

Volltext

Nucleation of dislocations in SiGe layers grown on (001)Si von Mooney, P. M., LeGoues, F. K., Tersoff, J., Chu, J. O.

Volltext

Observation of columnar microstructure in step-graded Si1-xGex/Si films using high-resolution X-ray microdiffraction von Eastman, D E, Stagarescu, C B, Xu, G, Mooney, P M, Jordan-Sweet, J L, Lai, B, Cai, Z

Volltext

Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices von Mooney, P. M., Jordan-Sweet, J. L., Ismail, K., Chu, J. O., Feenstra, R. M., LeGoues, F. K.

Volltext