Electronic structure and thermal stability of nitrided Hf silicate films using a direct N plasma von Cho, M.-H., Chung, K. B., Moon, D.-W.

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Quantitative surface analysis of FeNi alloy films by XPS, AES and SIMS von Kim, K. J., Moon, D. W., Park, C. J., Simons, D., Gillen, G., Jin, H., Kang, H. J.

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Critical review of the current status of thickness measurements for ultrathin SiO2 on Si Part V: Results of a CCQM pilot study von Seah, M. P., Spencer, S. J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D. W., Lee, H. J., Cho, Hyun Mo, Chen, H. Y., Wee, A. T. S., Osipowicz, T., Pan, J. S., Jordaan, W. A., Hauert, R., Klotz, U., van der Marel, C., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N. V., Chandler-Horowitz, D., Ehrstein, J. R., Muller, D., Dura, J. A.

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Change in the chemical state and thermal stability of HfO2 by the incorporation of Al2O3 von Cho, M.-H., Chang, H. S., Cho, Y. J., Moon, D. W., Min, K.-H., Sinclair, R., Kang, S. K., Ko, D.-H., Lee, J. H., Gu, J. H., Lee, N. I.

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Summary of ISO/TC 201 standard: XV. ISO 20341:2003-Surface chemical analysis-secondary ion mass spectrometry-method for estimating depth resolution parameters with multiple delta-l... von Moon, D. W.

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Interfacial characteristics of HfO2 films grown on strained Si0.7Ge0.3 by atomic-layer deposition von Cho, M.-H., Chang, H. S., Moon, D. W., Kang, S. K., Min, B. K., Ko, D.-H., Kim, H. S., McIntyre, Paul C., Lee, J. H., Ku, J. H., Lee, N. I.

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Development of B-doped Si multiple delta-layer reference materials for SIMS profiling von Kim, K. J., Moon, D. W., Chi, P., Simons, D.

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Inhibition of monoamine oxidase isoforms modulates nicotine withdrawal syndrome in the rat von Malin, D.H., Moon, W.D., Goyarzu, P., Barclay, E., Magallanes, N., Vela, A.J., Negrete, A.P., Mathews, H., Stephens, B., Mills, W.R.

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Interfacial characteristics of N-incorporated HfAlO high-k thin films von Cho, M.-H., Moon, D. W., Park, S. A., Kim, Y. K., Jeong, K., Kang, S. K., Ko, D.-H., Doh, S. J., Lee, J. H., Lee, N. I.

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Deconvolution of SIMS depth profiles of As multiple delta layers in silicon von Lee, J. W., Kim, K. J., Kim, H. K., Moon, D. W.

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Inter-laboratory comparison: Quantitative surface analysis of thin Fe-Ni alloy films von Kim, K. J., Unger, W. E. S., Kim, J. W., Moon, D. W., Gross, T., Hodoroaba, V.-D., Schmidt, D., Wirth, T., Jordaan, W., van Staden, M., Prins, S., Zhang, L., Fujimoto, T., Song, X. P., Wang, H.

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Investigation of Cs surface layer formation in Cs-SIMS with TOF-MEIS and SIMS von Houssiau, L., Noël, C., Mine, N., Jung, K. W., Min, W. J., Moon, D. W.

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Observation of a hexagonal BN surface layer on the cubic BN film grown by dual ion beam sputter deposition von Park, K. S., Lee, D. Y., Kim, K. J., Moon, D. W.

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Interfacial reaction depending on the stack structure of Al2O3 and HfO2 during film growth and postannealing von Cho, M.-H., Chung, K. B., Chang, H. S., Moon, D. W., Park, S. A., Kim, Y. K., Jeong, K., Whang, C. N., Lee, D. W., Ko, D.-H., Doh, S. J., Lee, J. H., Lee, N. I.

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Measurement of the physical and electrical thickness of ultrathin gate oxides von Chang, H. S., Yang, H. D., Hwang, H., Cho, H. M., Lee, H. J., Moon, D. W.

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Sympathetic nucleation: an overview von Aaronson, H.I., Spanos, G., Masamura, R.A., Vardiman, R.G., Moon, D.W., Menon, E.S.K., Hall, M.G.

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Macrostructure, hardness, and temperature in HSLA100 steel weld von Moon, D. W., Lambrakos, S. G., Wong, R. J., Metzbower, E. A.

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Microstructural, compositional, and microhardness variations across a gas-metal arc weldment made with an ultralow-carbon consumable von SPANOS, G, MOON, D. W, FONDA, R. W, MENON, E. S. K, FOX, A. G

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Investigation of the chemical state of ultrathin Hf–Al–O films during high temperature annealing von Cho, M.-H., Chang, H.S., Cho, Y.J., Moon, D.W., Min, K.-H., Sinclair, R., Kang, S.K., Ko, D.-H., Lee, J.H., Gu, J.H., Lee, N.I.

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Strain-induced diffusion in a strained Si1−xGex/Si heterostructure von Lim, Y. S., Lee, J. Y., Kim, H. S., Moon, D. W.

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