Perspectives and opportunities with multisubband plasmonics von Montes Bajo, M., Chauveau, J.-M., Vasanelli, A., Delteil, A., Todorov, Y., Sirtori, C., Hierro, A.

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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells von Jollivet, A., Hinkov, B., Pirotta, S., Hoang, H., Derelle, S., Jaeck, J., Tchernycheva, M., Colombelli, R., Bousseksou, A., Hugues, M., Le Biavan, N., Tamayo-Arriola, J., Montes Bajo, M., Rigutti, L., Hierro, A., Strasser, G., Chauveau, J.-M., Julien, F. H.

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Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors von Bajo, M. Montes, Sun, H., Uren, M. J., Kuball, M.

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On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress von Montes Bajo, M., Hodges, C., Uren, M. J., Kuball, M.

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Rock-salt CdZnO as a transparent conductive oxide von Tamayo-Arriola, J., Huerta-Barberà, A., Montes Bajo, M., Muñoz, E., Muñoz-Sanjosé, V., Hierro, A.

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Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitions von Le Biavan, N., Hugues, M., Montes Bajo, M., Tamayo-Arriola, J., Jollivet, A., Lefebvre, D., Cordier, Y., Vinter, B., Julien, F.-H., Hierro, A., Chauveau, J.-M.

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Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode von Khalid, Ata, Dunn, G. M., Macpherson, R. F., Thoms, S., Macintyre, D., Li, C., Steer, M. J., Papageorgiou, V., Thayne, I. G., Kuball, M., Oxley, C. H., Montes Bajo, M., Stephen, A., Glover, J., Cumming, D. R. S.

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Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges von Killat, N., Montes Bajo, M., Paskova, T., Evans, K. R., Leach, J., Li, X., Özgür, Ü., Morkoç, H., Chabak, K. D., Crespo, A., Gillespie, J. K., Fitch, R., Kossler, M., Walker, D. E., Trejo, M., Via, G. D., Blevins, J. D., Kuball, M.

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Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation von Sun, H., Montes Bajo, M., Uren, M.J., Kuball, M.

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Gallium nanoparticles as antireflection structures on III-V solar cells von Catalán-Gómez, S., Martínez Castellano, E., Schwarz, M., Montes Bajo, M., Dorado Vargas, L., Gonzalo, A., Redondo-Cubero, A., Gallego Carro, A., Hierro, A., Ulloa, J.M.

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On wafer thermal characterization of miniature gallium arsenide microcoolers with thermal loading from DC probes von Glover, J., Khalid, A., Cumming, D. R. S., Bajo, M. Montes, Kuball, M., Stephen, A., Dunn, G. M., Oxley, C. H.

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Micro-cooler enhancements by barrier interface analysis von Stephen, A., Dunn, G. M., Glover, J., Oxley, C. H., Bajo, M. Montes, Cumming, D. R. S., Khalid, A., Kuball, M.

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Ga-doping of nonpolar m-plane ZnMgO with high Mg contents von Tamayo-Arriola, J., Montes Bajo, M., Le Biavan, N., Lefebvre, D., Kurtz, A., Ulloa, J.M., Hugues, M., Chauveau, J.M., Hierro, A.

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Near Infrared InAs/GaAsSb Quantum Dot Light Emitting Diodes von Bajo, M. M., Ulloa, J. M., del Moral, M., Guzman, A., Hierro, A.

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Improvements in thermionic cooling through engineering of the heterostructure interface using Monte Carlo simulations von Stephen, A., Dunn, G. M., Oxley, C. H., Glover, J., Montes Bajo, M., Cumming, D. R. S., Khalid, A., Kuball, M.

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Use of interface phonon-polaritons for the alloy determination in ZnO/(Zn,Mg)O multiple quantum wells von Montes Bajo, M., Tamayo-Arriola, J., Le Biavan, N., Martínez Castellano, E., Lefebvre, D., Hugues, M., Chauveau, J.-M., Hierro, A.

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A Controllable and Highly Propagative Hybrid Surface Plasmon-Phonon Polariton in a CdZnO-based Two-Interface System von Tamayo-Arriola, J, E Martínez Castellano, M Montes Bajo, Huerta-Barberà, A, Muñoz, E, Muñoz-Sanjosé, V, Hierro, A

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Impact ionisation electroluminescence in planar GaAs-based heterostructure Gunn diodes: Spatial distribution and impact of doping non-uniformities von Montes Bajo, M., Dunn, G., Stephen, A., Khalid, Ata, Cumming, D. R. S., Oxley, C. H., Glover, J., Kuball, M.

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Terahertz oscillations in an In{sub 0.53}Ga{sub 0.47}As submicron planar Gunn diode von Khalid, Ata, Thoms, S., Macintyre, D., Li, C., Steer, M. J., Papageorgiou, V., Thayne, I. G., Cumming, D. R. S., Dunn, G. M., Macpherson, R. F., Stephen, A., Kuball, M., Montes Bajo, M., Oxley, C. H., Glover, J.

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hbox\hbox\hbox Planar Gunn Diodes Operating at a Fundamental Frequency of 164 GHz von Khalid, A., Li, C., Papageogiou, V., Dunn, G. M., Steer, M. J., Thayne, I. G., Kuball, M., Oxley, C. H., Montes Bajo, M., Stephen, A., Glover, J., Cumming, D. R. S.

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