-
1
-
2
-
3
-
4
-
5
-
6
-
7
-
8
-
9
-
10
-
11
-
12
-
13
-
14
Temperature dependence of photoluminescence oxygen-related deep levels in Al 0.2 Ga 0.3 In 0.5 P : Be grown by solid source molecular beam epitaxy
Veröffentlicht in Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
VolltextArtikel -
15
-
16
-
17
-
18
-
19
-
20