The Kinetics of Growth of a Nanosized Germanium Film Deposited on the Si(001) Surface by Magnetron Sputtering von Monakhov, I. S., Bondarenko, G. G.

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Kinetics of the formation of a phospholipid multilayer on a silica sol surface von Tikhonov, A. M., Asadchikov, V. E., Volkov, Yu. O., Roshchin, B. S., Monakhov, I. S., Smirnov, I. S.

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Effect of Pulsed Plasma Beams on the Structure and Mechanical Properties of the Surface Layer in an Inconel 718 Alloy von Borovitskaya, I. V., Demin, A. S., Komolova, O. A., Latyshev, S. V., Maslyaev, S. A., Mikhailova, A. B., Monakhov, I. S., Morozov, E. V., Pimenov, V. N., Bondarenko, G. G., Gaidar, A. I., Logachev, I. A., Matveev, E. V.

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Electrophysical Properties of Metal-Containing Nanocomposites at a Nanophase Concentration to the Percolation Threshold von Dyachkova, I. G., Mamontov, A. V., Monakhov, I. S., Shahbazov, S. Y., Shupegin, M. L.

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Application of thermodesorption mass spectrometry for studying proton water formation in the lunar regolith von Slyuta, E. N., Petrov, V. S., Yakovlev, O. I., Voropaev, S. A., Monakhov, I. S., Prokof’eva, T. V.

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Effect of the size factor on the lattice parameter and the Debye temperature of iron alloys doped with chromium or vanadium von Smirnov, I. S., Monakhov, I. S., Novoselova, E. G., Udovskii, A. L., Kolotushkin, V. P.

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Large-Scale Electronic Structure Calculations of Vacancies in 4H-SiC Using the Heyd-Scuseria-Ernzerhof Screened Hybrid Density Functional von Gali, Adam, Hornos, Tamas, Svensson, Bengt Gunnar

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Damage to the Surface Layer of Inconel 718 Alloy by Pulsed Beam-Plasma Flows von Borovitskaya, I. V., Demin, A. S., Komolova, O. A., Latyshev, S. V., Maslyaev, S. A., Monakhov, I. S., Morozov, E. V., Pimenov, V. N., Sasinovskaya, I. P., Bondarenko, G. G., Gaydar, A. I., Logachev, I. A.

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Mechanical Properties of Diamond-Like Silicon–Carbon Films Doped with Vanadium von Vinogradov, A. N., Dyachkova, I. G., Mamontov, A. V., Monakhov, I. S., Shahbazov, S. Y., Shupegin, M. L.

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High Temperature Silicon Carbide CMOS Integrated Circuits von Thompson, Robin. F., Fletcher, John, Clark, David T., Zhu, C., Young, R.A.R., Finney, S., Smith, Dave A., Cormack, Jennifer D., Ramsay, Ewan P., Murphy, A.E.

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High-Temperature Reliability of SiC Power MOSFETs von Lelis, Aivars J., Habersat, Daniel B., Green, Ronald

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Allocation of liver grafts worldwide – Is there a best system? von Tschuor, Christoph, Ferrarese, Alberto, Kuemmerli, Christoph, Dutkowski, Philipp, Burra, Patrizia, Clavien, Pierre-Alain, Lendoire, Javier, Imventarza, Oscar, Crawford, Michael, Andraus, Wellington, D'Albuquerque, Luiz Augusto Carneiro, Hernandez-Alejandro, Roberto, Dokus, M. Katherine, Tomiyama, Koji, Zheng, Shusen, Echeverri, Gabriel Jaime, Taimr, Pavel, Fronek, Jiri, de Rosner-van Rosmalen, Marieke, Vogelaar, Serge, Lesurtel, Mickael, Mabrut, Jean-Yves, Nagral, Sanjay, Kakaei, Farzad, Malek-Hosseini, Seyed Ali, Egawa, Hiroto, Contreras, Alan, Czerwinski, Jaroslaw, Danek, Teresa, Pinto-Marques, Hugo, Gautier, Sergey V., Monakhov, Artem, Melum, Espen, Ericzon, Bo-Göran, Kang, Koo Jeong, Kim, Myoung Soo, Sanchez-Velazquez, Patricia, Oberkofler, Christian Eugen, Müllhaupt, Beat, Linecker, Michael, Eshmuminov, Dilmurodjon, Grochola, Lukasz Filip, Song, Zhoulon, Kambakamba, Patryk, Chen, Chao-Long, Haberal, Mehmet, Yilmaz, Sezai, Rowe, Ian A.C., Kron, Philipp

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Single-Crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications von Oliveros, A., Weeber, E., Jarosezski, M., Frewin, Christopher L., Schettini, N., Saddow, Stephen E., Coletti, Camilla

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Energy Band Structure of SiO2/4H-SiC Interfaces and its Modulation Induced by Intrinsic and Extrinsic Interface Charge Transfer von Kirino, Takashi, Shimura, Takayoshi, Nakano, Yuki, Nakamura, Takashi, Hosoi, Takuji, Kagei, Yusuke, Mitani, Shuhei, Watanabe, Heiji, Teraoka, Yuden, Harries, James, Yoshigoe, Akitaka

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Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing von Zhang, Xuan, Tsuchida, Hidekazu, Nagano, Masahiro

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Investigation of Surface and Interface Morphology of Thermally Grown SiO2 Dielectrics on 4H-SiC(0001) Substrates von Shimura, Takayoshi, Konzono, Kohei, Nakano, Yuki, Hosoi, Takuji, Nakamura, Takashi, Uenishi, Yusuke, Mitani, Shuhei, Watanabe, Heiji

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Stabilization of the fluorite phase in the ZrO2–Y2O3 system von Popov, V. V., Yastrebtsev, A. A., Smirnov, I. S., Monakhov, I. S., Novoselova, E. G., Tsarenko, N. A., Udovskii, A. L.

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Applying the in situ X-ray reflectometry method to define the nanodimensional silicon film parameters von Smirnov, I. S., Novoselova, E. G., Egorov, A. A., Monakhov, I. S.

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4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments von Udrea, Florin, Puscasu, D., Draghici, Florin, Brezeanu, Gheorghe, Rusu, Ion, Udrea, F., Boianceanu, C., Craciunioiu, F.

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Microscopic Examination of SiO2/4H-SiC Interfaces von Hatakeyama, Tetsuo, Suzuki, T., Okumura, Hajime, Matsuhata, Hirofumi, Shinohe, Takashi

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