Dominating migration barrier for intrinsic defects in gallium oxide: Dose-rate effect measurements von Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Monakhov, Edouard V., Kuznetsov, Andrej Yu

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Activation energy of silicon diffusion in gallium oxide: Roles of the mediating defects charge states and phase modification von Azarov, Alexander, Venkatachalapathy, Vishnukanthan, Vines, Lasse, Monakhov, Edouard, Lee, In-Hwan, Kuznetsov, Andrej

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Elucidating the origin of external quantum efficiency losses in cuprous oxide solar cells through defect analysis von Gan, Jiantuo, Hoye, Robert L.Z., Ievskaya, Yulia, Vines, Lasse, Marin, Andrew T., MacManus-Driscoll, Judith L., Monakhov, Edouard V.

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Annealing Kinetics of the Interstitial Carbon–Dioxygen Complex in Silicon von Ayedh, Hussein M., Grigorev, Aleksei A., Galeckas, Augustinas, Svensson, Bengt G., Monakhov, Edouard V.

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Extended defects in ZnO: Efficient sinks for point defects von Azarov, Alexander, Rauwel, Protima, Hallén, Anders, Monakhov, Edouard, Svensson, Bengt G.

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Effect of buried extended defects on the radiation tolerance of ZnO von Azarov, Alexander, Wendler, Elke, Lorenz, Katharina, Monakhov, Edouard, Svensson, Bengt G.

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Optical activity and defect/dopant evolution in ZnO implanted with Er von Azarov, Alexander, Galeckas, Augustinas, Hallén, Anders, Kuznetsov, Andrej, Monakhov, Edouard, Svensson, Bengt G.

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Silver migration and trapping in ion implanted ZnO single crystals von Azarov, Alexander, Vines, Lasse, Rauwel, Protima, Monakhov, Edouard, Svensson, Bengt G.

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Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films von Thøgersen, Annett, Rein, Margrethe, Monakhov, Edouard, Mayandi, Jeyanthinath, Diplas, Spyros

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Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials von Riise, Heine Nygard, Schumann, Thomas, Azarov, Alexander, Hübner, Renè, Skorupa, Wolfgang, Svensson, Bengt G., Monakhov, Edouard

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Photoluminescence of reactively sputtered Ag2O films von Lund, Esben, Galeckas, Augustinas, Azarov, Alexander, Monakhov, Edouard V., Svensson, Bengt G.

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Complex Investigation of High Efficiency and Reliable Heterojunction Solar Cell Based on an Improved Cu2O Absorber Layer von Fara, Laurentiu, Chilibon, Irinela, Nordseth, Ornulf, Craciunescu, Dan, Savastru, Dan, Vasiliu, Cristina, Baschir, Laurentiu, Fara, Silvian, Kumar, Raj, Monakhov, Edouard, Connolly, James P.

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Vacancy clustering and acceptor activation in nitrogen-implanted ZnO von Børseth, Thomas Moe, Tuomisto, Filip, Christensen, Jens S., Monakhov, Edouard V., Svensson, Bengt G., Kuznetsov, Andrej Yu

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Basic optical and electronic properties of Ag2Cu2O3 crystalline films von Lund, Esben, Galeckas, Augustinas, Monakhov, Edouard V., Svensson, Bengt G.

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Photoluminescence imaging under applied bias for characterization of Si surface passivation layers von Haug, Halvard, Nordseth, Ørnulf, Monakhov, Edouard V., Marstein, Erik Stensrud

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The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms von Gusakov, Vasilii E., Lastovskii, Stanislau B., Murin, Leonid I., Tolkacheva, Ekaterina A., Khirunenko, Lyudmila I., Sosnin, Mikhail G., Duvanskii, Andrei V., Markevich, Vladimir P., Halsall, Matthew P., Peaker, Anthony R., Kolevatov, Ilia, Ayedh, Hussein M., Monakhov, Edouard V., Svensson, Bengt G.

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Disorder-Induced Ordering in Gallium Oxide Polymorphs von Azarov, Alexander, Bazioti, Calliope, Venkatachalapathy, Vishnukanthan, Vajeeston, Ponniah, Monakhov, Edouard, Kuznetsov, Andrej

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Defects in p-type Cz-silicon irradiated at elevated temperatures von Ganagona, Naveengoud, Raeissi, Bahman, Vines, Lasse, Monakhov, Edouard V., Svensson, Bengt G.

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Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon von Monakhov, Edouard V., Svensson, Bengt Gunnar, Kolevatov, Ilia L., Herklotz, Frank, Bobal, Viktor

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Optical and electrical properties of reactively sputtered Ag2Cu2O3 films von Lund, Esben, Galeckas, Augustinas, Monakhov, Edouard V., Svensson, Bengt G.

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