Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS von Momose, H.S., Morifuji, E., Yoshitomi, T., Ohguro, T., Saito, M., Iwai, H.

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Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layer von Momose, H.S., Ohguro, T., Morifuji, E., Sugaya, H., Nakamura, S., Iwai, H.

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Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI von Morimoto, T., Ohguro, T., Momose, S., Iinuma, T., Kunishima, I., Suguro, K., Katakabe, I., Nakajima, H., Tsuchiaki, M., Ono, M., Katsumata, Y., Iwai, H.

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Ultrathin gate oxide CMOS on [111] surface-oriented Si substrate von Momose, H.S., Ohguro, T., Nakamura, S.-I., Toyoshima, Y., Ishiuchi, H., Iwai, H.

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An accurate and efficient high frequency noise simulation technique for deep submicron MOSFETs von Jung-Suk Goo, Chang-Hoon Choi, Danneville, F., Morifuji, E., Momose, H.S., Zhiping Yu, Iwai, H., Lee, T.H., Dutton, R.W.

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Analysis of the temperature dependence of hot-carrier-induced degradation in bipolar transistors for Bi-CMOS von Momose, H.S., Iwai, H.

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Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide von Momose, H.S., Nakamura, S.-I., Ohguro, T., Yoshitomi, T., Morifuji, E., Morimoto, T., Katsumata, Y., Iwai, H.

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A study on hot carrier effects on N-MOSFETs under high substrate impurity concentration von Ono, M., Saito, M., Yoshitomi, T., Fiegna, C., Ohguro, T., Momose, H.S., Iwai, H.

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Solifenacin as Add-on Therapy for Overactive Bladder Symptoms in Men Treated for Lower Urinary Tract Symptoms—ASSIST, Randomized Controlled Study von Yamaguchi, Osamu, Kakizaki, Hidehiro, Homma, Yukio, Takeda, Masayuki, Nishizawa, Osamu, Gotoh, Momokazu, Yokoyama, Osamu, Seki, Narihito, Yoshida, Masaki

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Power Si-MOSFET operating with high efficiency under low supply voltage von Ohguro, T., Saito, M., Morifuji, E., Murakami, K., Matsuzaki, K., Yoshitomi, T., Morimoto, T., Momose, H.S., Katsumata, Y., Iwai, H.

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Undoped epitaxial Si channel n-MOSFET grown by UHV-CVD with preheating von Ohguro, T., Sugiyama, N., Imai, S., Usuda, K., Saito, M., Yoshitomi, T., Ono, M., Kimijima, H., Momose, H.S., Katsumata, Y., Iwai, H.

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Technology towards low power/low voltage and scaling of MOSFETs von Iwai, Hiroshi, Momose, Hisayo Sasaki

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HfSiON gate dielectrics design for mixed signal CMOS von Kojima, K., Iijima, R., Ohguro, T., Watanabe, T., Takayanagi, M., Momose, H.S., Tshimaru, K., Ishiuchi, H.

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An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's von Momose, H.S., Morimoto, T., Ozawa, Y., Yamabe, K., Iwai, H.

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Single-chip CMOS transceiver front-end for DCS-1800 wireless communications von Steyaert, M, Borremans, M, Janssens, J, De Muer, B, Itoh, N, Craninckx, J, Crols, J, Morifuji, E, Momose, H S, Sansen, W

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1.5 nm direct-tunneling gate oxide Si MOSFET's von Sasaki, H., Ono, M., Yoshitomi, T., Ohguro, T., Nakamura, S., Saito, M., Iwai, H.

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P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall von Saito, M., Yoshitomi, T., Hara, H., Ono, M., Akasaka, Y., Nii, H., Matsuda, S., Momose, H.S., Katsumata, Y., Ushiku, Y., Iwai, H.

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Comprehensive understanding of random telegraph noise with von Higashi, Y., Momo, N., Momose, H. S., Ohguro, T., Matsuzawa, K.

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1.5-nm gate oxide CMOS on [110] surface-oriented Si substrate von Momose, H.S., Ohguro, T., Kojima, K., Nakamura, S., Toyoshima, Y.

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Process dependence of 0.11 μm RF CMOS on high-resistivity substrate for System on Chip (SOC) application von Ohguro, T., Kojima, K., Momo, N., Momose, H.S., Toyoshima, Y.

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