Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors von Yang, J.K.W., Kerman, A.J., Dauler, E.A., Cord, B., Anant, V., Molnar, R.J., Berggren, K.K.

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Growth of gallium nitride by hydride vapor-phase epitaxy von Molnar, R.J., Götz, W., Romano, L.T., Johnson, N.M.

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GaN avalanche photodiodes operating in linear-gain mode and Geiger mode von Verghese, S., McIntosh, K.A., Molnar, R.J., Mahoney, L.J., Aggarwal, R.L., Geis, M.W., Molvar, K.M., Duerr, E.K., Melngailis, I.

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Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN von Look, D.C., Stutz, C.E., Molnar, R.J., Saarinen, K., Liliental-Weber, Z.

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GaN hot electron transistors: From ballistic to coherent von Daulton, J.W., Molnar, R.J., Brinkerhoff, J.A., Adamson, Z.C., Hollis, M.A., Zaslavsky, A.

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Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film von Geis, M.W., Varghese, J.O., Hollis, M.A., Yichen, Y., Nemanich, R.J., Wuorio, C.H., Zhang, Xi, Turner, G.W., Warnock, S.M., Vitale, S.A., Molnar, R.J., Osadchy, T., Zhang, B.

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Orthodox etching of HVPE-grown GaN von Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar, R.J., Müller, S., Sivel, V.G.M., Nowak, G., Grzegory, I.

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Defect Donor and Acceptor in GaN von Look, D. C., Reynolds, D. C., Hemsky, J. W., Sizelove, J. R., Jones, R. L., Molnar, R. J.

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Bulk GaN crystal growth by the high-pressure ammonothermal method von D’Evelyn, M.P., Hong, H.C., Park, D.-S., Lu, H., Kaminsky, E., Melkote, R.R., Perlin, P., Lesczynski, M., Porowski, S., Molnar, R.J.

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Low-energy electron-excited nanoluminescence studies of GaN and related materials von Brillson, L.J., Bradley, S.T., Goss, S.H., Sun, X., Murphy, M.J., Schaff, W.J., Eastman, L.F., Look, D.C., Molnar, R.J., Ponce, F.A., Ikeo, N., Sakai, Y.

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Electron mobility in very low density GaN∕AlGaN∕GaN heterostructures von Manfra, M. J., Baldwin, K. W., Sergent, A. M., Molnar, R. J., Caissie, J.

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Growth of GaN by ECR-assisted MBE von Moustakas, T.D., Lei, T., Molnar, R.J.

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Orthodox etching of HVPE-grown GaN von Weyher, J.L., Lazar, S., Macht, L., Liliental-Weber, Z., Molnar,R.J., Muller, S., Nowak, G., Grzegory, I.

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Pressure Induced Deep Gap State of Oxygen in GaN von Wetzel, C., Suski, T., Ager III, J. W., Weber, E. R., Haller, E. E., Fischer, S., Meyer, B. K., Molnar, R. J., Perlin, P.

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Strongly localized excitons in gallium nitride von Wetzel, C., Fischer, S., Krüger, J., Haller, E. E., Molnar, R. J., Moustakas, T. D., Mokhov, E. N., Baranov, P. G.

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Electron mobility exceeding 160 000 cm{sup 2}/V s in AlGaN/GaN heterostructures grown by molecular-beam epitaxy von Manfra, M.J., Baldwin, K.W., Sergent, A.M., West, K.W., Molnar, R.J., Caissie, J., Massachusetts Institute of Technology, Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts 02420-9108

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Unusual luminescence lines in GaN von Reshchikov, M.A., Huang, D., Yun, F., Visconti, P., He, L., Morkoc, H., Jasinski, J., Liliental-Weber, Z., Molnar, R.J., Park, S.S., Lee, K.Y.

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Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces von Sun, X. L., Bradley, S. T., Jessen, G. H., Look, D. C., Molnar, R. J., Brillson, L. J.

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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) von Glaser, E.R, Carlos, W.E, Braga, G.C.B, Freitas, J.A, Moore, W.J, Shanabrook, B.V, Wickenden, A.E, Koleske, D.D, Henry, R.L, Bayerl, M.W, Brandt, M.S, Obloh, H, Kozodoy, P, DenBaars, S.P, Mishra, U.K, Nakamura, S, Haus, E, Speck, J.S, Van Nostrand, J.E, Sanchez, M.A, Calleja, E, Ptak, A.J, Myers, T.H, Molnar, R.J

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Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy von Fang, Z.-Q., Look, D.C., Jasinski, J., Benamara, M., Liliental-Weber, Z., Molnar, R.J.

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